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參數(shù)資料
| 型號： | M72DW64000B |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and 16Mbit Pseudo SRAM, 3V Supply, Multiple Memory Product |
| 中文描述： | 64兆比特（x8 / x16插槽，多銀行，引導(dǎo)塊）和16Mbit的閃存?zhèn)戊o態(tài)存儲器，3V電源，多記憶體產(chǎn)品 |
| 文件頁數(shù)： | 12/19頁 |
| 文件大?。?/td> | 102K |
| 代理商： | M72DW64000B |
M72DW64000B
12/19
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, and the DC and AC charac-
teristics of the device. The parameters in the DC
and AC characteristics Tables that follow, are de-
rived from tests performed under the Measure-
ment Conditions summarized in Table 4,
Operating and AC Measurement Conditions. De-
signers should check that the operating conditions
in their circuit match the measurement conditions
when relying on the quoted parameters.
The operating and AC measurement parameters
given in this section (see Table 4 below) corre-
spond to those of the stand-alone Flash Memory
and PSRAM components. For compatibility pur-
poses, the M29DW640D voltage range is restrict-
ed to V
CCS
in the stacked product.
Table 4. Operating and AC Measurement Conditions
Figure 5. AC Measurement I/O Waveform
Figure 6. AC Measurement Load Circuit
Table 5. Device Capacitance
Symbol
Note: Sampled only, not 100% tested.
Parameter
Flash Memory
PSRAM
Units
Min
Max
Min
Max
V
CCF
Supply Voltage
2.7
3.6
–
–
V
V
CCS
Supply Voltage
–
–
2.7
3.3
V
Ambient Operating Temperature
–40
85
–30
85
°C
Load Capacitance (C
L
)
30
50
pF
Input Rise and Fall Times
10
4
ns
Input Pulse Voltages
0 to V
CCF
0 to V
CCP
V
Input and Output Timing Ref. Voltages
V
CCF
/2
V
CCP
/2
V
AI08186
VCCF
0V
VCCF/2
AI08187
VCCF
CL
CL includes JIG capacitance
25k
DEVICE
UNDER
TEST
0.1μF
VCCF
0.1μF
VPP
25k
Parameter
Test Condition
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V, f=1 MHz
12
pF
C
OUT
Output Capacitance
V
OUT
= 0V, f=1 MHz
15
pF
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