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參數(shù)資料
| 型號(hào)： | M6MGB166S4BWG |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP |
| 中文描述： | 3.3的CMOS只快閃記憶體 |
| 文件頁數(shù)： | 17/30頁 |
| 文件大小： | 253K |
| 代理商： | M6MGB166S4BWG |
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Nov. 1999 , Rev.3.2
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY &
4,194,304-BIT (262,144-WORD BY 16-BIT) CMOS SRAM
Stacked-CSP (Chip Scale Package)
M6MGB/T166S4BWG
17
AC WAVEFORMS FOR PAGE PROGRAM OPERATION WITH BGO (F-WE# control)
ARRAY READ FROM THE OTHER BANK
WITH BGO
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IH
ADDRESS VALID
F-CE#
F-OE#
F-WE#
DATA
F-RY/BY#
V
IH
V
IL
V
IL
V
IH
V
IL
7FH
01H~7EH
~
~
00H
t
AS
V
IL
41H
DIN
DOUT
DIN
DIN
SRD
VALID
VALID
VALID
VALID
t
WC
t
AH
t
CS
t
CH
t
WPH
t
WP
t
DS
t
DH
t
WHRL
t
a(CE)
t
a(OE)
t
OEH
DOUT
PROGRAM DATA TO ONE BANK
Change Bank Address
F-A19~F-A17,
A16~A7
A6 ~A0
BAN VALID
AC WAVEFORMS FOR PAGE PROGRAM OPERATION WITH BGO (F-CE# control)
ARRAY READ FROM THE OTHER BANK
WITH BGO
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IH
ADDRESS VALID
F-CE#
F-OE#
F-WE#
DATA
F-RY/BY#
V
IH
V
IL
V
IL
V
IH
V
IL
7FH
01H~7EH
~
~
00H
t
AS
V
IL
41H
DIN
DOUT
DIN
DIN
SRD
VALID
VALID
VALID
VALID
t
WC
t
AH
t
WS
t
CH
t
CEPH
t
CEP
t
DS
t
DH
t
EHRL
t
a(CE)
t
a(OE)
t
OEH
DOUT
PROGRAM DATA TO ONE BANK
Change Bank Address
F-A19~F-A17,
A16~A7
A6 ~A0
BAN VALID
~
~
~
~
~
~
~
~
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M6MGB331S4BKT | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B |
| M6MGB331S8AKT | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| M6MGB331S8BKT | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| M6MGD137W34DWG | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM |
| M6MGD13TW34DWG | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM |
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