參數(shù)資料
型號： M6MGB162S4BVP
廠商： Mitsubishi Electric Corporation
英文描述： CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
中文描述： 3.3的CMOS只快閃記憶體
文件頁數(shù)： 2/29頁
文件大?。?/td> 239K
代理商： M6MGB162S4BVP
Sep. 1999 , Rev.2.0
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY &
4,194,304-BIT (524,288-WORD BY 8-BIT) CMOS SRAM
Stacked-MCP (Multi Chip Package)
M6MGB/T162S4BVP
2
BLOCK DIAGRAM
DATA INPUTS/OUTPUTS
MULTIPLEXER
INPUT/OUTPUT
BUFFERS
DQ
15
DQ
14
DQ
13
DQ
12
DQ
2
DQ
1
DQ
0
DQ
3
WSM
16Mb Flash Memory
X-DECODER
Y-DECODER
Y-GATE / SENSE AMP.
F-CE#
OE#
WE#
F-WP#
F-RP#
F-VCC(3.3V)
GND (0V)
CUI
STATUS / ID REGISTER
128 WORD PAGE BUFFER
Main Block 32KW
Main Block 32KW
F-RY/BY#
READY/BUSY OUTPUT
A
18
A
17
A
16
A
15
A
14
A
13
A
12
A
11
A
10
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
ADDRESS
INPUTS
CHIP ENABLE INPUT
OUTPUT ENABLE INPUT
WRITE ENABLE INPUT
WRITE PROTECT INPUT
RESET/POWER DOWN INPUT
B
28
Parameter Block5 16KW
Parameter Block4 16KW
Parameter Block7 16KW
Boot Block 16KW
Parameter Block3 16KW
Parameter Block2 16KW
Parameter Block1 16KW
B
A
19
A
R
S-CE
WE#
OE#
524288 WORD x
8 BITS
CLOCK
GENERATOR
DQ7
DQ0
S-VCC
GND
S-A
-1
4Mb SRAM
A
0
A
16
A
17
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M6MGB166S2BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
M6MGB166S4BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
M6MGB331S4BKT 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
M6MGB331S8AKT 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
M6MGB331S8BKT 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
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