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參數(shù)資料
| 型號(hào)： | M68AW256MN70ND6E |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | SRAM |
| 英文描述： | 256K X 16 STANDARD SRAM, 70 ns, PDSO44 |
| 封裝： | LEAD FREE, PLASTIC, TSOP2-44 |
| 文件頁數(shù)： | 3/23頁 |
| 文件大?。?/td> | 379K |
| 代理商： | M68AW256MN70ND6E |
11/23
M68AW256M
Table 5. Capacitance
Note: 1. Sampled only, not 100% tested.
2. At TA = 25°C, f = 1 MHz, VCC = 3.0V.
Table 6. DC Characteristics
Note: 1. Average AC current, cycling at tAVAV minimum.
2. E = VIL, LB OR/AND UB = VIL, VIN = VIL OR VIH.
3. E
≤ 0.2V, LB OR/AND UB ≤ 0.2V, VIN ≤ 0.2V OR VIN ≥ VCC –0.2V.
4. Output disabled.
Figure 8. Address Controlled, Read Mode AC Waveforms
Note: E = Low, G = Low, W = High, UB = Low and/or LB = Low.
Symbol
Parameter(1,2)
Test
Condition
Min
Max
Unit
CIN
Input Capacitance on all pins (except DQ)
VIN = 0V
8pF
COUT
Output Capacitance
VOUT = 0V
10
pF
Symbol
Parameter
Test Condition
-L
-N
Unit
Min
Max
Min
Max
ICC1
(1,2)
Operating Supply Current
VCC = 3.6V, f = 1/tAVAV,
IOUT = 0mA
70ns
20
10
mA
55ns
26
15
mA
ICC2
(3)
Operating Supply Current
VCC = 3.6V, f = 1MHz,
IOUT = 0mA
22
mA
ISB
Standby Supply Current
CMOS
VCC = 3.6V, f = 0,
E
≥ VCC –0.2V or
LB=UB
≥ VCC –0.2V
20
A
ILI
Input Leakage Current
0V
≤ VIN ≤ VCC
–1
1–11
A
ILO
Output Leakage Current
0V
≤ VOUT ≤ VCC (4)
–1
1–11
A
VIH
Input High Voltage
2.2
VCC + 0.3
2.2
VCC + 0.3
V
VIL
Input Low Voltage
–0.3
0.6
–
0.3
0.6
V
VOH
Output High Voltage
IOH = –1.0mA
2.4
V
VOL
Output Low Voltage
IOL = 2.1mA
0.4
V
AI03956b
tAVAV
tAVQV
tAXQX
A0-A17
DQ0-DQ7 and/or DQ8-DQ15
VALID
DATA VALID
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| M68AW256MN70ND6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (256K x16) 3.0V Asynchronous SRAM |
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