參數(shù)資料
型號: M5M44405CTP-5
廠商: Mitsubishi Electric Corporation
英文描述: EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM
中文描述: 江戶(超頁模式)4194304位(1048576 - Word的4位)動態(tài)隨機存儲器
文件頁數(shù): 3/27頁
文件大?。?/td> 244K
代理商: M5M44405CTP-5
EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM
M5M44405CJ,TP-5,-6,-7,-5S,-6S,-7S
MITSUBISHI LSIs
M5M44405CJ,TP-5,-5S:Under development
Note 2 : Current flowing into an IC is positive, out is negative.
Note
3 : I
CC1(AV)
, I
CC3 (AV)
, I
CC4(AV)
and I
CC6(AV)
are dependent on cycle rate. Maximum current is measured at the fastest cycle rate.
Note
4 : I
CC1(AV)
and I
CC4(AV)
are dependent on output loading. Specified values are obtained with the output open.
Note
5 : Column Address can be changed once or less while RAS=V
IL
and CAS=V
IH
.
3
ABSOLUTE MAXIMUM RATINGS
V
CC
V
I
V
O
I
O
P
d
T
opr
T
stg
V
V
V
mA
mW
C
C
-
1~7
-
1~7
-
1~7
50
1000
0~70
-
65~150
Ta=25C
RECOMMENDED OPERATING CONDITIONS
(Ta=0~70C, unless otherwise noted)
(Note 1)
V
V
V
V
V
5.5
0
6.0
0.8
0.8
5
0
4.5
0
2.4
-
1.0
-
2.0
V
CC
V
SS
V
IH
V
IL
DQ
1
~
4
others
ELECTRICAL CHARACTERISTICS
(Ta=0~70C, V
CC
= 5V±10%, V
SS
=0V, unless otherwise noted)
(Note 2)
V
OH
V
OL
I
OZ
I
I
I
CC1 (AV)
I
CC2 (AV)
I
CC3 (AV)
I
CC4(AV)
I
CC6(AV)
I
CC8(AV)
I
CC9(AV)
M5M44405C-5,-5S
M5M44405C-6,-6S
M5M44405C-7,-7S
M5M44405C-5,-5S
M5M44405C-6,-6S
M5M44405C-7,-7S
M5M44405C-5,-5S
M5M44405C-6,-6S
M5M44405C-7,-7S
M5M44405C-5,-5S
M5M44405C-6,-6S
M5M44405C-7,-7S
I
OH
=–5mA
I
OL
= 4.2mA
Q floating 0V
V
OUT
5.5V
0V
V
IN
+6.5V,
Other inputs pins=
0V
RAS, CAS cycling
t
RC
=t
WC
=min.
output open
RAS= CAS =V
IH
, output open
RAS= CAS
V
CC
–0.5V
output open
RAS cycling, CAS= V
IH
t
RC
=min.
output open
RAS=V
IL
, CAS cycling
t
PC
=min.
output open
CAS before RAS refresh cycling
t
RC
=min.
output open
RAS
cycling
CAS
0.2V or CAS
before RAS refresh cycling
RAS
0.2V or
V
CC
-0.2V
CAS
0.2V or
V
CC
-0.2V
W
0.2V(Except for RAS falling edge)
or V
CC
-0.2V
OE
0.2V or
V
CC
-0.2V
A
0
~A
9
0.2V or
V
CC
-0.2V,
DQ=open
t
RC
=125μs,
t
RAS
=
t
RAS
min
~1μs
V
V
μA
μA
mA
mA
mA
mA
mA
RAS=CAS
0.2V
output open
μA
μA
Symbol
Parameter
Conditions
Ratings
Unit
With respect to Vss
Supply voltage
Input voltage
Output voltage
Output current
Power dissipation
Operating temperature
Storage temperature
Symbol
Parameter
Unit
Limits
Nom
Min
Max
Supply voltage
Supply voltage
High-level input voltage, all inputs
Low-level input voltage
Note 1 : All voltage values are with respect to Vss.
M5M44405C
M5M44405C(S)
Symbol
Parameter
Limits
Typ
Min
2.4
0
-10
-10
Max
Vcc
0.4
10
10
125
100
Unit
Test conditions
2
1
85
120
120
0.1
125
100
85
125
100
105
85
75
85
High-level output voltage
Low-level output voltage
Off-state output current
Input current
Average supply current
from Vcc, operating
(Note 3,4,5)
Supply current from Vcc ,
stand-by (Note 6)
Average supply current
from Vcc, refreshing
(Note 3,5)
Average supply current
from Vcc, Hyper-Page-
Mode (Note 3,4,5)
Average supply current
from Vcc, CAS before
RAS refresh mode (Mote 3)
Average supply current
from Vcc,
Extended-Refresh cycle (Note 6)
Average supply current
from Vcc, Self-Refresh
cycle (Note 6)
M5M44405C(S)
相關PDF資料
PDF描述
M5M44405CTP-5S EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM
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