參數(shù)資料
型號: M5M44405CJ
廠商: Mitsubishi Electric Corporation
英文描述: EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM
中文描述: 江戶(超頁模式)4194304位(1048576 - Word的4位)動態(tài)隨機(jī)存儲器
文件頁數(shù): 6/27頁
文件大?。?/td> 244K
代理商: M5M44405CJ
EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM
M5M44405CJ,TP-5,-6,-7,-5S,-6S,-7S
MITSUBISHI LSIs
M5M44405CJ,TP-5,-5S:Under development
Write Cycle (Early Write and Delayed Write)
M5M44405C-5,-5S M5M44405C-6,-6S M5M44405C-7,-7S
Min
Max
Min
90
50
8
40
13
0
Parameter
Symbol
Limits
Unit
Max
Min
130
70
13
55
20
Max
8
0
10000
10000
10000
10000
8
8
8
0
8
10
10
10
10
0
10
110
60
10
48
15
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
10000
10000
13
13
13
13
0
13
0
Write cycle time
RAS low pulse width
CAS low pulse width
CAS hold time after RAS low
RAS hold time after CAS low
Write setup time before CAS low
Write hold time after CAS low
CAS hold time after W low
RAS hold time after W low
Write pulse width
(Note 24)
Data setup time before CAS low or W low
Data hold time after CAS low or W low
t
WC
t
RAS
t
CAS
t
CSH
t
RSH
t
WCS
t
WCH
t
CWL
t
RWL
t
WP
t
DS
t
DH
M5M44405C-5,-5S M5M44405C-6,-6S M5M44405C-7,-7S
Min
Max
Min
109
10000
10000
89
Parameter
Symbol
Limits
Unit
Max
Min
161
107
Max
Read-Write and Read-Modify-Write Cycles
t
RWC
t
RAS
t
CAS
t
CSH
t
RSH
t
RCS
t
CWD
t
RWD
t
AWD
t
OEH
Note 23 :
t
RWC
is specified as
t
RWC(min)
=
t
RAC(max)
+
t
ODD(min)
+
t
RWL(min)
+
t
RP(min)
+4
t
T
.
Note
24 :
t
WCS
,
t
CWD
,
t
RWD
and
t
AWD
and,
t
CPWD
are specified as reference points only. If
t
WCS
t
WCS(min)
the cycle is an early write cycle and the DQ pins will
remain high impedance throughout the entire cycle. If
t
CWD
t
CWD(min)
,
t
RWD
t
RWD(min)
,
t
AWD
t
AWD(min)
and
t
CPWD
t
CPWD(min)
(for fast page
mode cycle only), the cycle is a read-modify-write cycle and the DQ will contain the data read from the selected address. If neither of the above condition
(delayed write) of the DQ (at access time and until CAS or OE goes back to V
IH
) is indeterminate.
44
0
32
77
47
44
38
0
28
65
40
38
75
10000
10000
75
133
89
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
57
0
42
92
57
57
10000
10000
107
13
15
20
Read write/read modify write cycle time
RAS low pulse width
CAS low pulse width
CAS hold time after RAS low
RAS hold time after CAS low
Read setup time before CAS low
Delay time, CAS low to W low
Delay time, RAS low to W low
Delay time, address to W low
OE hold time after W low
(Note 23)
(Note 24)
(Note 24)
(Note 24)
6
相關(guān)PDF資料
PDF描述
M5M44405CTP-5 EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM
M5M44405CTP-5S EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM
M5M44405CTP-6 EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM
M5M44405CTP-6S EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM
M5M44405CTP-7 EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM
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M5M44405CJ-5S 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM
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M5M44405CJ-7 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM