參數(shù)資料
型號(hào)： M5M44265CJ-5S
廠商： Mitsubishi Electric Corporation
英文描述： EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
中文描述： 江戶（超頁模式）4194304位（262144字由16位）動(dòng)態(tài)隨機(jī)存儲(chǔ)器
文件頁數(shù)： 7/31頁
文件大?。?/td> 319K
代理商： M5M44265CJ-5S
EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
M5M44265CJ,TP-5,-6,-7,-5S,-6S,-7S
MITSUBISHI LSIs
7
Limits
Min
20
57
Parameter
Symbol
Unit
Min
25
66
5
Max
Min
30
79
Max
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
(Note 27)
(Note 28)
(Note 24)
28
65
5
28
43
7
16
100000
13
38
60
7
92
10
33
50
7
77
M5M44265C-5,-5S M5M44265C-6,-6S M5M44265C-7,-7S
Max
16
100000
13
100000
CAS before RAS Refresh Cycle
(Note 29)
Limits
Min
5
10
17
Max
Parameter
CAS setup time before RAS low
CAS hold time after RAS low
CAS low pulse width
Symbol
t
CSR
t
CHR
t
CAS
Unit
Min
5
10
17
Max
Min
5
15
22
Max
ns
ns
ns
Note 29: Eight or more CAS before RAS cycles instead of eight RAS cycles are necessary for proper operation of CAS before RAS refresh mode.
M5M44265C-5,-5S M5M44265C-6,-6S M5M44265C-7,-7S
CBR self refresh RAS low pulse width
CBR self refresh RAS high precharge time
CBR self refresh CAS hold time
t
RASS
t
RPS
t
CHS
μs
ns
100
130
-50
100
110
-50
100
90
-50
Self Refresh Cycle
*
(Note 30)
Limits
Min
Max
Parameter
Symbol
Unit
Min
Max
Min
Max
ns
M5M44265C-5,-5S M5M44265C-6,-6S M5M44265C-7,-7S
Note 25: All previously specified timing requirements and switching characteristics are applicable to their respective Hyper page mode cycle.
26:
t
HPC(min)
is specified in the case of read-only and early write-only in Hyper page mode.
27:
t
RAS(min)
is specified as two cycles of CAS input are performed.
28:
t
CP(max)
is specified as a reference point only.
Hyper page mode read/write cycle time
Hyper page mode read write / read modify write cycle time
Output hold time from CAS low
RAS low pulse width for read or write cycle
CAS high pulse width
RAS hold time after CAS precharge
Delay time, CAS precharge to W low
Hold time to maintain the data Hi-Z until CAS access
OE pulse width (Hi-Z control)
W pulse width (Hi-Z control)
Delay time, CAS low to W low after read
Delay time, Address to W low after read
Delay time, CAS precharge to W low after read
Delay time, CAS low to OE high after read
Delay time, Address to OE high after read
Delay time, CAS precharge to OE high after read
t
HPC
t
HPRWC
t
DOH
t
RAS
t
CP
t
CPRH
t
CPWD
t
CHOL
t
OEPE
t
WPE
t
HCWD
t
HAWD
t
HPWD
t
HCOD
t
HAOD
t
HPOD
(Note 26)
Hyper Page Mode Cycle
(Read, Early Write, Read-Write, Read-Modify-Write Cycle, Read Write Mix Cycle, Hi-Z control by OE or W)
(Note 25)
28
40
43
13
7
7
42
57
60
20
32
47
50
15
25
8
35
38
30
33
5
7
7
7
7
相關(guān)PDF資料
PDF描述
M5M44265CJ-6 EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
M5M44405CJ-6S EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM
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M5M44405CTP-5 EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M5M44265CJ-6 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
M5M44265CJ-6S 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
M5M44265CJ-7 制造商:Mitsubishi Electric 功能描述:Dynamic RAM, EDO, 256K x 16, 40 Pin, Plastic, SOJ
M5M44265CJ-7S 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
M5M44265CTP5 制造商:MITS 功能描述:New
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