參數資料
型號: M58LT128GSB1ZA5E
廠商: 意法半導體
英文描述: 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
中文描述: 128Mbit(8兆x16插槽,多銀行,多層次,多突發(fā))1.8V電源安全閃存
文件頁數: 56/98頁
文件大?。?/td> 693K
代理商: M58LT128GSB1ZA5E
11 DC and AC parameters
M58LT128GST, M58LT128GSB
56/98
Table 22.
Asynchronous Read AC Characteristics
Symbol
Alt
Parameter
M58LT128GST,
M58LT128GSB
Unit
110
R
t
AVAV
t
RC
Address Valid to Next Address Valid
Min
110
ns
t
AVQV
t
ACC
Address Valid to Output Valid (Random)
Max
110
ns
t
AVQV1
t
PAGE
Address Valid to Output Valid (Page)
Max
25
ns
t
AXQX(1)
1.
Sampled only, not 100% tested.
t
OH
Address Transition to Output Transition
Min
0
ns
t
ELTV
Chip Enable Low to Wait Valid
Max
16
ns
t
ELQV(2)
2.
G may be delayed by up to t
ELQV
- t
GLQV
after the falling edge of E without increasing t
ELQV
.
t
CE
Chip Enable Low to Output Valid
Max
110
ns
t
ELQX(1)
t
LZ
Chip Enable Low to Output Transition
Max
0
ns
t
EHTZ
Chip Enable High to Wait Hi-Z
Max
17
ns
t
EHQX(1)
t
OH
Chip Enable High to Output Transition
Min
0
ns
t
EHQZ(1)
t
HZ
Chip Enable High to Output Hi-Z
Max
17
ns
t
GLQV
(2)
t
OE
Output Enable Low to Output Valid
Max
30
ns
t
GLQX(1)
t
OLZ
Output Enable Low to Output Transition
Min
0
ns
t
GLTV
Output Enable Low to WAIT Valid
Max
17
ns
t
GHQX (1)
t
OH
Output Enable High to Output Transition
Min
0
ns
t
GHQZ
(1)
t
DF
Output Enable High to Output Hi-Z
Max
17
ns
t
GHTZ
t
DF
Output Enable High to WAIT Hi-Z
Max
17
ns
L
t
AVLH
t
AVADVH
Address Valid to Latch Enable High
Min
11
ns
t
ELLH
t
ELADVH
Chip Enable Low to Latch Enable High
Min
10
ns
t
LHAX
t
ADVHAX
Latch Enable High to Address Transition
Min
9
ns
t
LLLH
t
ADVLADVH
Latch Enable Pulse Width
Min
11
ns
t
LLQV
t
ADVLQV
Latch Enable Low to Output Valid
(Random)
Max
110
ns
相關PDF資料
PDF描述
M58LT128GSB1ZA5F 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GST1ZA5 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GSB 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GSB1ZA5 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GS 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
相關代理商/技術參數
參數描述
M58LT128GSB1ZA5F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GST 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GST1ZA5 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GST1ZA5E 制造商:STMicroelectronics 功能描述:
M58LT128GST1ZA5F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories