參數(shù)資料
型號: M58CR064Q85ZB6T
廠商: 意法半導體
英文描述: 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
中文描述: 64兆位4Mb的× 16,雙行,突發(fā)1.8V電源快閃記憶體
文件頁數(shù): 17/70頁
文件大小: 1000K
代理商: M58CR064Q85ZB6T
17/70
M58CR064C, M58CR064D, M58CR064P, M58CR064Q
Table 6. Electronic Signature Codes
Note: CR=Configuration Register.
Figure 5. Security Block and Protection Register Memory Map
Code
Address (h)
Data (h)
Manufacturer Code
Bottom Bank Address + 00
0020
Device Code
Top (M58CR064C)
Bottom Bank Address + 01
88CA
Bottom (M58CR064D)
88CB
Top (M58CR064P)
8801
Bottom (M58CR064Q)
8802
Block Protection
Lock
Block Address + 02
0001
Unlocked
0000
Locked and Locked-Down
0003
Unlocked and Locked-Down
0002
Reserved
Bottom Bank Address + 03
Reserved
Configuration Register
Bottom Bank Address + 05
CR
Protection Register Lock
ST Factory Default
Bottom Bank Address + 80
xx06
Security Block Permanently Locked
xx02
OTP Area Permanently Locked
xx04
Security Block and OTP Area Permanently
Locked
xx00
Protection Register
Bottom Bank Address + 81
Bottom Bank Address + 84
Unique Device
Number
Bottom Bank Address + 85
Bottom Bank Address + 8C
OTP Area
AI06181
Parameter Block # 0
User Programmable OTP
Unique device number
Protection Register Lock
2
1
0
8Ch
85h
84h
81h
80h
PROTECTION REGISTER
SECURITY BLOCK
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