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參數(shù)資料
| 型號(hào)： | M58CR064Q12ZB6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的× 16，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 12/70頁(yè) |
| 文件大?。?/td> | 1000K |
| 代理商： | M58CR064Q12ZB6T |
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M58CR064C, M58CR064D, M58CR064P, M58CR064Q
12/70
COMMAND INTERFACE
All Bus Write operations to the memory are inter-
preted by the Command Interface. Commands
consist of one or more sequential Bus Write oper-
ations. An internal Program/Erase Controller han-
dles all timings and verifies the correct execution
of the Program and Erase commands. The Pro-
gram/Erase Controller provides a Status Register
whose output may be read at any time to monitor
the progress or the result of the operation.
The Command Interface is reset to read mode
when power is first applied, when exiting from Re-
set or whenever V
DD
is lower than V
LKO
. Com-
mand sequences must be followed exactly. Any
invalid combination of commands will reset the de-
vice to read mode.
Refer to Table 4, Command Codes and Appendix
D, Tables 36 and 37, Command Interface States -
Modify and Lock Tables,
for a summary of the
Command Interface.
The Command Interface is split into two types of
commands: Standard commands and Factory
Program commands. The following sections ex-
plain in detail how to perform each command.
Table 4. Command Codes
Hex Code
Command
01h
Block Lock Confirm
03h
Set Configuration Register Confirm
10h
Alternative Program Setup
20h
Block Erase Setup
2Fh
Block Lock-Down Confirm
30h
Double Word Program Setup
40h
Program Setup
50h
Clear Status Register
55h
Quadruple Word Program Setup
60h
Block Lock Setup, Block Unlock Setup,
Block Lock Down Setup and Set
Configuration Register Setup
70h
Read Status Register
80h
Bank Erase Setup
90h
Read Electronic Signature
98h
Read CFI Query
B0h
Program/Erase Suspend
C0h
Protection Register Program
D0h
Program/Erase Resume, Block Erase
Confirm, Bank Erase Confirm, Block
Unlock Confirm
FFh
Read Array
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| M58CR064DZB | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064QZB | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064P90ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58CR064Q85ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064Q90ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064QZB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064-ZBT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58DR032C100ZA6T | 功能描述:閃存 32M (4Mx8) 100ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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