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參數(shù)資料
| 型號(hào)： | M58CR064PZB |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的× 16，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 1/70頁(yè) |
| 文件大?。?/td> | 1000K |
| 代理商： | M58CR064PZB |
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June 2003
M58CR064C, M58CR064D
M58CR064P, M58CR064Q
64 Mbit (4Mb x 16, Dual Bank, Burst )
1.8V Supply Flash Memory
FEATURES SUMMARY
I
SUPPLY VOLTAGE
– V
DD
= 1.65V to 2V for Program, Erase and
Read
– V
DDQ
= 1.65V to 3.3V for I/O Buffers
– V
PP
= 12V for fast Program (optional)
I
SYNCHRONOUS / ASYNCHRONOUS READ
– Synchronous Burst Read mode : 54MHz
– Asynchronous/ Synchronous Page Read
mode
– Random Access: 85, 90, 100, 120ns
I
PROGRAMMING TIME
– 10μs by Word typical
– Double/Quadruple Word Program option
I
MEMORY BLOCKS
– Dual Bank Memory Array: 16/48 Mbit
– Parameter Blocks (Top or Bottom location)
I
DUAL OPERATIONS
– Program Erase in one Bank while Read in
other
– No delay between Read and Write operations
I
BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
– WP for Block Lock-Down
I
SECURITY
– 128 bit user programmable OTP cells
– 64 bit unique device number
– One parameter block permanently lockable
I
COMMON FLASH INTERFACE (CFI)
I
100,000 PROGRAM/ERASE CYCLES per
BLOCK
Figure 1. Package
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M58CR064C: 88CAh
– Bottom Device Code, M58CR064D: 88CBh
– Top Device Code, M58CR064P: 8801h
– Bottom Device Code, M58CR064Q: 8802h
FBGA
TFBGA56 (ZB)
6.5 x 10mm
相關(guān)PDF資料 |
PDF描述 |
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| M58CR064P85ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064Q85ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064-ZBT | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064C10ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064C85ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58CR064Q | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064Q10ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064Q12ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064Q85ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064Q90ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
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