型號(hào): | M470T6464EHS-CE6 |
元件分類: | DRAM |
英文描述: | DDR DRAM MODULE, ZMA200 |
封裝: | ROHS COMPLIANT, SODIMM-200 |
文件頁(yè)數(shù): | 2/22頁(yè) |
文件大?。?/td> | 401K |
代理商: | M470T6464EHS-CE6 |
相關(guān)PDF資料 |
PDF描述 |
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M470T6464EHS-LF7 | DDR DRAM MODULE, ZMA200 |
M48T128V | 3.3V-5V 1 Mbit 128Kb x8 TIMEKEEPER SRAM |
M48T12 | 16 Kbit 2Kb x8 TIMEKEEPER[ SRAM |
M48T12-150PC1 | 16 Kbit 2Kb x8 TIMEKEEPER[ SRAM |
M48T12-200PC1 | 16 Kbit 2Kb x8 TIMEKEEPER[ SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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M470T6464QZH3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 SDRAM Memory |
M470T6554BG0-CD5/CC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC |
M470T6554BG3-CD5/CC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC |
M470T6554BGZ0-CD5/CC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC |
M470T6554BGZ3-CD5/CC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC |