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參數(shù)資料
| 型號： | M30262F8GP |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP48 |
| 封裝： | 7 X 7 MM, 0.50 MM PITCH, PLASTIC, LQFP-48 |
| 文件頁數(shù)： | 16/41頁 |
| 文件大小： | 322K |
| 代理商： | M30262F8GP |
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M16C/26 Group
5. Electrical Characteristics (VCC=5V)
Rev.1.00
2004.6.10
page 21 of 37
REJ09B0176-0100Z
5.4 Flash Memory Version Electrical Characteristics
Note 1: When not otherwise specified, Vcc = 2.7 to5.5V; Topr = 0 to 60 °C.
Note 2: VCC = 5V; TOPR = 25 °C.
Note 3: Definition of E/W cycle: Each block may be written to a variable number of times - up to a maximum of the total
number of distinct word addresses - for every block erase. Performing multiple writes to the same address before
an erase operation is prohibited.
Note 4: Maximum number of E/W cycles for which opration is guaranteed.
Note 5: Topr = 55°C.
Note 6: When not otherwise specified, Vcc = 2.7 to 5.5V; Topr = -40 to 85°C (D7, U7) / -20 to 85°C (D9, U9).
Note 7: Table18.5 applies for Block A or B E/W cycles > 1000. Otherwise, use Table 18.4.
Note 8: To reduce the number of E/W cycles, a block erase should ideally be performed after writing as many different
word addresses (only one time each) as possible. It is important to track the total number of block erases.
Note 9: Should erase error occur during block erase, attempt to execute clear status register command, then clock erase
command at least three times until erase error disappears.
Note 10: When Block A or B E/W cycles exceed 100 (D7, D9, U7, U9), select one wait state per block access. When FMR
17 is set to "1", one wait state is inserted per access to Block A or B - regardless of the value of PM17. Wait state
insertion during access to all other blocks, as well as to internal RAM, is controlled by PM17 - regardless of the
setting of FMR17.
Note 11: Customers desiring E/W failure rate information should contact their Renesas technical support representative.
Word program time (Vcc=5.0V, Topr=25°C)
Block erase time
75
0.2
600
9
s
Parameter
Standard
Min.
Typ.
(Note 2)
Max
Unit
Symbol
–
0.49
s
0.7
9
s
1.29
s
2Kbyte block
8Kbyte block
16Kbyte block
32Kbyte block
–
Erase/Write cycle (Note 3)
100(Note 4)
cycle
td(SR-ES)
–
Time delay from Suspend Request until Erase Suspend
Data retention time (Note 5)
ms
year
8
20
Word program time (Vcc=5.0V, Topr=25°C)
Block erase time(Vcc=5.0V, Topr=25°C)
100
s
Parameter
Standard
Min.
Typ.
(Note 2)
Max
Unit
Symbol
–
0.3
s
(2Kbyte block)
–
Erase/Write cycle (Note 3, 8, 9)
10000(Note 4,10)
cycle
td(SR-ES) Time delay from Suspend Request until Erase Suspend
ms
8
Table 16.4. Flash Memory Version Electrical Characteristics (Note 1) 100E/W cycle products (D3, D5, U3, U5))
Table 16.5. Flash Memory Version Electrical Characteristics (Note 6) 10000 E/W cycle products (D7, D9, U7, U9)
[blockA and block B(Note 7)]
Erase suspend
request
(interrupt request)
FMR46
td(SR-ES)
Flash program, erase voltage
Flash read operation voltage
VCC = 2.7 V to 5.5 V
VCC=2.7 to 5.5 V
Table 16.6. Flash Memory Version Program/Erase Voltage and Read Operation Voltage Characteristics
(at Topr = 0 to 60oC)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M30262F8GP D3 | 制造商:Renesas Electronics Corporation 功能描述: |
| M30262F8GP D5 | 制造商:Renesas Electronics Corporation 功能描述: |
| M30262F8GP#D3 | 功能描述:IC M16C MCU FLASH 64K 48-LQFP RoHS:否 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:M16C™ M16C/微型/26 產(chǎn)品培訓模塊:CAN Basics Part-1 CAN Basics Part-2 Electromagnetic Noise Reduction Techniques Part 1 M16C Product Overview Part 1 M16C Product Overview Part 2 標準包裝:1 系列:M16C™ M32C/80/87 核心處理器:M32C/80 芯體尺寸:16/32-位 速度:32MHz 連通性:EBI/EMI，I²C，IEBus，IrDA，SIO，UART/USART 外圍設備:DMA，POR，PWM，WDT 輸入/輸出數(shù):121 程序存儲器容量:384KB（384K x 8） 程序存儲器類型:閃存 EEPROM 大小:- RAM 容量:24K x 8 電壓 - 電源 (Vcc/Vdd):3 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 34x10b，D/A 2x8b 振蕩器型:內(nèi)部 工作溫度:-20°C ~ 85°C 封裝/外殼:144-LQFP 包裝:托盤 產(chǎn)品目錄頁面:749 (CN2011-ZH PDF) 配用:R0K330879S001BE-ND - KIT DEV RSK M32C/87 |
| M30262F8GP#D5 | 功能描述:IC M16C MCU FLASH 64K 48LQFP RoHS:否 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:M16C™ M16C/微型/26 產(chǎn)品培訓模塊:MCU Product Line Introduction XMEGA Introduction AVR XMEGA USB Connectivity 標準包裝:90 系列:AVR® XMEGA 核心處理器:AVR 芯體尺寸:8/16-位 速度:32MHz 連通性:I²C，IrDA，SPI，UART/USART 外圍設備:欠壓檢測/復位，DMA，POR，PWM，WDT 輸入/輸出數(shù):50 程序存儲器容量:192KB（96K x 16） 程序存儲器類型:閃存 EEPROM 大小:4K x 8 RAM 容量:16K x 8 電壓 - 電源 (Vcc/Vdd):1.6 V ~ 3.6 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 16x12b; D/A 2x12b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 85°C 封裝/外殼:64-TQFP 包裝:托盤 配用:ATSTK600-RC14-ND - STK600 SOCKET/ADAPTER 64TQFPATSTK600-TQFP64-ND - STK600 SOCKET/ADAPTER 64-TQFPATAVRONEKIT-ND - KIT AVR/AVR32 DEBUGGER/PROGRMMRATAVRISP2-ND - PROGRAMMER AVR IN SYSTEM |
| M30262F8GP#D7 | 制造商:Renesas Electronics Corporation 功能描述:MCU 16-bit M16C CISC 64KB Flash 3.3V/5V 48-Pin PQFP |
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