參數(shù)資料
型號: M2V56D30AKT-75A
廠商: Mitsubishi Electric Corporation
元件分類: 圓形連接器
英文描述: Circular Connector; No. of Contacts:5; Series:MS27484; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:10; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:10-5 RoHS Compliant: No
中文描述: 256M雙數(shù)據(jù)速率同步DRAM
文件頁數(shù): 32/40頁
文件大?。?/td> 768K
代理商: M2V56D30AKT-75A
32
MITSUBISHI ELECTRIC
Mar. '02
MITSUBISHI LSIs
DDR SDRAM
(Rev.1.44)
M2S56D20/ 30/ 40ATP -75AL, -75A, -75L, -75, -10L, -10
M2S56D20/ 30/ 40AKT -75AL, -75A, -75L, -75, -10L, -10
256M Double Data Rate Synchronous DRAM
Burst read operation can be interrupted by a burst stop command(TERM). READ to TERM interval is 1 CLK
minimum. The time between TERM command to output disable is equal to the CAS Latency. As a result, READ
to TERM interval determines valid data length to be outputted. The figure below shows example of BL=8.
[Read Interrupted by Burst Stop]
Read Interrupted by TERM (BL=8)
CL=2.5
Command
DQS
Command
DQ
Command
DQ
Q0
Q1
Q2
Q3
Q0
Q1
/CLK
CLK
DQ
Q0
Q1
Q2
Q3
Q4
Q5
TERM
READ
READ
TERM
READ
TERM
DQS
DQS
CL=2.0
Command
DQS
Command
DQ
Command
DQ
Q0 Q1
Q2
Q3
Q0 Q1
DQ
Q0 Q1
Q2
Q3
Q4
Q5
TERM
READ
READ
TERM
READ
TERM
DQS
DQS
相關PDF資料
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相關代理商/技術參數(shù)
參數(shù)描述
M2V56D30AKT-75AL 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM
M2V56D30AKT-75L 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM
M2V56D30ATP-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM
M2V56D30ATP-10L 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM
M2V56D30ATP-75 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM