參數(shù)資料
型號(hào)： M29F200BB70MT3
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 128K X 16 FLASH 5V PROM, 70 ns, PDSO44
封裝： 0.500 INCH, PLASTIC, SO-44
文件頁(yè)數(shù)： 6/29頁(yè)
文件大?。?/td> 583K
代理商： M29F200BB70MT3
M29F200BT, M29F200BB
14/29
Table 5. Commands, 8-bit mode, BYTE = VIL
Note: 1. X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block.
2. All values in the table are in hexadecimal.
3. The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A16, DQ8-DQ14 and DQ15 are Don’t
Care. DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH.
4. After a Read/Reset command, read the memory as normal until another command is issued.
5. After an Auto Select command, read Manufacturer ID, Device ID or Block Protection Status.
6. After a Program, Unlock Bypass Program, Chip Erase, or Block Erase command, read the Status Register until the Program/Erase
Controller completes and the memory returns to Read Mode. Add additional Blocks during Block Erase Command with additional
Bus Write Operations until the Timeout Bit is set.
7. After the Unlock Bypass command, issue Unlock Bypass Program or Unlock Bypass Reset commands.
8. After the Unlock Bypass Reset command read the memory as normal until another command is issued.
9. After the Erase Suspend command, read non-erasing memory blocks as normal, issue Auto Select and Program commands on
non-erasing blocks as normal.
10. After the Erase Resume command the suspended Erase operation resumes, read the Status Register until the Program/Erase Con-
troller completes and the memory returns to Read Mode.
Table 6. Program, Erase Times and Program, Erase Endurance Cycles
(TA = 0 to 70°C, –40 to 85°C or –40 to 125°C)
Note: TA = 25°C, VCC = 5V.
Command
Le
ngt
h
Bus Write Operations
1st
2nd
3rd
4th
5th
6th
Addr
Data
Addr
Data
Addr
Data
Addr
Dat
a
Addr
Data
Addr
Data
Read/Reset(4)
1X
F0
3AAA
AA
555
55
X
F0
Auto Select(5)
3
AAA
AA
555
55
AAA
90
Program(6)
4
AAA
AA
555
55
AAA
A0
PA
PD
Unlock Bypass(7)
3
AAA
AA
555
55
AAA
20
Unlock Bypass Program(6)
2
X
A0
PA
PD
Unlock Bypass Reset(8)
2X
90
X
00
Chip Erase(6)
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
AAA
10
Block Erase(6)
6+
AAA
AA
555
55
AAA
80
AAA
AA
555
55
BA
30
Erase Suspend(9)
1X
B0
Erase Resume(10)
1X
30
Parameter
Min
Typ (1)
Typical after
100k W/E Cycles (1)
Max
Unit
Chip Erase (All bits in the memory set to ‘0’)
0.8
s
Chip Erase
2.5
10
s
Block Erase (64 Kbytes)
0.6
4
s
Program (Byte or Word)
8
150
s
Chip Program (Byte by Byte)
2.3
9
s
Chip Program (Word by Word)
1.2
4.5
s
Program/Erase Cycles (per Block)
100,000
cycles
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