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參數(shù)資料
| 型號： | M29DW324DB70ZA1E |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory |
| 中文描述： | 32兆位4Mb的x8或功能的2Mb x16插槽，雙行16點16分，啟動塊3V電源快閃記憶體 |
| 文件頁數(shù)： | 48/49頁 |
| 文件大?。?/td> | 815K |
| 代理商： | M29DW324DB70ZA1E |
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M29DW324DT, M29DW324DB
48/49
REVISION HISTORY
Table 31. Document Revision History
Date
Version
Revision Details
19-Apr-2002
-01
Document written
08-Apr-2003
2.0
Revision numbering modified: a minor revision will be indicated by incrementing the digit
after the dot, and a major revision, by incrementing the digit before the dot (revision
version 01 equals 1.0).
Revision History moved to end of document.
When in Extended Block mode, the block at the boot block address can be used as OTP.
Data Toggle Flow chart corrected. Logic diagram corrected.
TFBGA48, 6x8mm, 0.8mm pitch package added. Identification Current I
ID
removed from
Table 12, DC Characteristics. Erase Suspend Latency time and Data Retention
parameters and notes added to Table 7, Program, Erase Times and Program, Erase
Endurance Cycles.
Appendix C, EXTENDED MEMORY BLOCK, added. Auto Select Command sued to read
the Extended Memory Block. Extended Memory Block Verify Code row added to Tables 3
and 4, Bus Operations, BYTE = V
IL
and Bus Operations, BYTE = V
IH
. Bank Address
modified in Auto Select Command. Chip Erase Address modified in Table 8, Status
Register Bits. V
SS
pin connection to ground clarified. Note added to Table 20, Ordering
Information Scheme.
07-May-2003
2.1
Table 17, 48 Lead Plastic Thin Small Outline, 12x20 mm, Package Mechanical Data and
Figure 17, 48 Lead Plastic Thin Small Outline, 12x20 mm, Bottom View Package Outline”
corrected.
25-Jun-2003
3.0
Document promoted from Preliminary Data to full Datasheet status. Packing option added
to Table 20, Ordering Information Scheme.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29DW324DB70ZA1F | 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory |
| M29DW324DB70ZA1T | 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory |
| M29DW324DB70ZA6 | CABLE ASSEMBLY; LEAD-FREE SOLDER; N MALE TO N FEMALE; 50 OHM, RG225/U COAX, DOUBLE SHIELDED |
| M29DW324DB70ZA6F | 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory |
| M29DW324DB70ZA6T | 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29DW324DB70ZA1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory |
| M29DW324DB70ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory |
| M29DW324DB70ZA6 | 功能描述:閃存 32M (4Mx8 or 2Mx16) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29DW324DB70ZA6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory |
| M29DW324DB70ZA6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory |
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