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參數(shù)資料
| 型號： | M27V401-200F6TR |
| 廠商： | 意法半導體 |
| 英文描述： | 4 Mbit 512Kb x8 Low Voltage UV EPROM and OTP EPROM |
| 中文描述： | 4兆位512KB的x8低壓紫外線EPROM和檢察官辦公室存儲器 |
| 文件頁數(shù)： | 6/15頁 |
| 文件大?。?/td> | 103K |
| 代理商： | M27V401-200F6TR |
M27V401
6/15
Figure 5. Read Mode AC Waveforms
AI00724B
tAXQX
tEHQZ
A0-A18
E
G
Q0-Q7
tAVQV
tGHQZ
tGLQV
tELQV
VALID
Hi-Z
VALID
Table 8B. Read Mode DC Characteristics
(1)
(T
A
= 0 to 70
°
C or –40 to 85
°
C; V
CC
= 3.3V
±
10%; V
PP
= V
CC
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Sampled only, not 100% tested.
Symbol
Alt
Parameter
Test Condition
M27V401
Unit
-180
-200
Min
Max
Min
Max
t
AVQV
t
ACC
Address Valid to Output Valid
E = V
IL
, G = V
IL
180
200
ns
t
ELQV
t
CE
Chip Enable Low to Output Valid
G = V
IL
180
200
ns
t
GLQV
t
OE
Output Enable Low to Output Valid
E = V
IL
90
100
ns
t
EHQZ(2)
t
DF
Chip Enable High to Output Hi-Z
G = V
IL
0
50
0
70
ns
t
GHQZ(2)
t
DF
Output Enable High to Output Hi-Z
E = V
IL
0
50
0
70
ns
t
AXQX
t
OH
Address Transition to Output
Transition
E = V
IL
, G = V
IL
0
0
ns
System Considerations
The power switching characteristics of Advanced
CMOS EPROMs requirecareful decoupling of the
devices. The supply current, I
CC
, has three seg-
ments that are of interest to the system designer:
the standby current level, the active current level,
and transient current peaks that are produced by
the fallingand rising edgesof E. The magnitude of
the transient current peaks is dependent on the
capacitive and inductive loading of the device at
the output.
The associated transient voltage peaks can be
suppressed by complying with the two line output
control and by properly selected decoupling ca-
pacitors. It is recommended that a 0.1
μ
F ceramic
capacitor be used on every device between V
CC
and V
SS
. This should be a high frequency capaci-
tor of low inherent inductance and should be
placed as close to the device as possible. In addi-
tion, a 4.7
μ
F bulk electrolytic capacitor should be
used between V
CC
and V
SS
for every eight devic-
es. The bulk capacitor should be located near the
power supply connection point. The purposeof the
bulk capacitor is to overcome the voltage drop
caused by the inductive effects of PCB traces.
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M27V401-200K1 | 功能描述:可擦除可編程ROM 4M (512Kx8) 200ns RoHS:否 制造商:Maxim Integrated 類型: 存儲容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風格:Through Hole 封裝 / 箱體:TO-92 |
| M27V401-200K1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8 Low Voltage UV EPROM and OTP EPROM |
| M27V401-200K6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8 Low Voltage UV EPROM and OTP EPROM |
| M27V401-200N1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8 Low Voltage UV EPROM and OTP EPROM |
| M27V401-200N6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8 Low Voltage UV EPROM and OTP EPROM |
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