參數(shù)資料
型號: M27C512-60C3
廠商: 意法半導體
英文描述: 512 Kbit (64K x8) UV EPROM and OTP EPROM
中文描述: 512千位(64K的× 8)紫外線存儲器和OTP存儲器
文件頁數(shù): 3/22頁
文件大?。?/td> 403K
代理商: M27C512-60C3
11/22
M27C512
Table 7. Read Mode DC Characteristics
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
2. Maximum DC voltage on Output is VCC +0.5V.
Table 8. Read Mode AC Characteristics
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
2. Sampled only, not 100% tested.
3. Speed obtained with High Speed AC measurement conditions.
Symbol
Parameter
Test Condition (1)
Min
Max
Unit
ILI
Input Leakage Current
0V
≤ VIN ≤ VCC
±10
A
ILO
Output Leakage Current
0V
≤ VOUT ≤ VCC
±10
A
ICC
Supply Current
E = VIL, G = VIL,
IOUT = 0mA, f = 5MHz
30
mA
ICC1
Supply Current (Standby) TTL
E = VIH
1mA
ICC2
Supply Current (Standby) CMOS
E > VCC – 0.2V
100
A
IPP
Program Current
VPP = VCC
10
A
VIL
Input Low Voltage
–0.3
0.8
V
VIH
(2)
Input High Voltage
2
VCC + 1
V
VOL
Output Low Voltage
IOL = 2.1mA
0.4
V
VOH
Output High Voltage TTL
IOH = –1mA
3.6
V
Output High Voltage CMOS
IOH = –100A
VCC – 0.7V
V
Symbol
Alt
Parameter
Test Condition (1)
M27C512
Unit
-45 (3)
-60
-70
-80
MinMax
Min
Max
tAVQV
tACC
Address Valid to
Output Valid
E = VIL, G = VIL
45
60
70
80
ns
tELQV
tCE
Chip Enable Low to
Output Valid
G = VIL
45
60
70
80
ns
tGLQV
tOE
Output Enable Low
to Output Valid
E = VIL
25
30
35
40
ns
tEHQZ
(2)
tDF
Chip Enable High
to Output Hi-Z
G = VIL
0250
25
030030
ns
tGHQZ
(2)
tDF
Output Enable
High to Output Hi-Z
E = VIL
0250
25
030030
ns
tAXQX
tOH
Address Transition
to Output Transition
E = VIL, G = VIL
0
000
ns
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M27C512-60C3E 512 Kbit 64Kb x8 UV EPROM and OTP EPROM
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