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參數(shù)資料
| 型號： | M25P32-VME6 |
| 廠商： | 意法半導體 |
| 元件分類： | FLASH |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 5/39頁 |
| 文件大小： | 506K |
| 代理商： | M25P32-VME6 |
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M25P32
INSTRUCTIONS
All instructions, addresses and data are shifted in
and out of the device, most significant bit first.
Serial Data Input (D) is sampled on the first rising
edge of Serial Clock (C) after Chip Select (S) is
driven Low. Then, the one-byte instruction code
must be shifted in to the device, most significant bit
first, on Serial Data Input (D), each bit being
latched on the rising edges of Serial Clock (C).
The instruction set is listed in Table 4..
Every instruction sequence starts with a one-byte
instruction code. Depending on the instruction,
this might be followed by address bytes, or by data
bytes, or by both or none.
In the case of a Read Data Bytes (READ), Read
Data Bytes at Higher Speed (Fast_Read), Read
Status
Register
(RDSR),
Read
Identification
(RDID) or Release from Deep Power-down, and
Read Electronic Signature (RES) instruction, the
shifted-in instruction sequence is followed by a
data-out sequence. Chip Select (S) can be driven
High after any bit of the data-out sequence is be-
ing shifted out.
In the case of a Page Program (PP), Sector Erase
(SE), Bulk Erase (BE), Write Status Register
(WRSR), Write Enable (WREN), Write Disable
(WRDI) or Deep Power-down (DP) instruction,
Chip Select (S) must be driven High exactly at a
byte boundary, otherwise the instruction is reject-
ed, and is not executed. That is, Chip Select (S)
must driven High when the number of clock pulses
after Chip Select (S) being driven Low is an exact
multiple of eight.
All attempts to access the memory array during a
Write Status Register cycle, Program cycle or
Erase cycle are ignored, and the internal Write
Status Register cycle, Program cycle or Erase cy-
cle continues unaffected.
Table 4. Instruction Set
Instruction
Description
One-byte Instruction Code
Address
Bytes
Dummy
Bytes
Data
Bytes
WREN
Write Enable
0000 0110
06h
0
WRDI
Write Disable
0000 0100
04h
0
RDID
Read Identification
1001 1111
9Fh
0
1 to 3
RDSR
Read Status Register
0000 0101
05h
0
1 to
∞
WRSR
Write Status Register
0000 0001
01h
0
1
READ
Read Data Bytes
0000 0011
03h
3
0
1 to
∞
FAST_READ
Read Data Bytes at Higher Speed
0000 1011
0Bh
3
1
1 to
∞
PP
Page Program
0000 0010
02h
3
0
1 to 256
SE
Sector Erase
1101 1000
D8h
3
0
BE
Bulk Erase
1100 0111
C7h
0
DP
Deep Power-down
1011 1001
B9h
0
RES
Release from Deep Power-down,
and Read Electronic Signature
1010 1011
ABh
0
3
1 to
∞
Release from Deep Power-down
0
相關PDF資料 |
PDF描述 |
|---|---|
| M25P32-VME6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P32-VME6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P32-VME6T | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P32-VME6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P32-VME6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M25P32VME6G | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P32-VME6G | 功能描述:閃存 SERIAL FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25P32VME6P | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P32-VME6P | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:32-Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface |
| M25P32VME6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
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