參數(shù)資料
型號: M24M01
廠商: 意法半導體
英文描述: 1 Mbit Serial IC Bus EEPROM
中文描述: 1兆位串行IC總線的EEPROM
文件頁數(shù): 3/19頁
文件大小: 120K
代理商: M24M01
3/19
M24M01
SIGNAL DESCRIPTION
Serial Clock (SCL)
This input signal is used to strobe all data in and
out of the device. In applications where this signal
is used by slave devices to synchronize the bus to
a slower clock, the bus master must have an open
drain output, and a pull-up resistor must be con-
nected from Serial Clock (SCL) to V
CC
. (Figure 4
indicates how the value of the pull-up resistor can
be calculated). In most applications, though, this
method of synchronization is not employed, and
so the pull-up resistor is not necessary, provided
that the bus master has a push-pull (rather than
open drain) output.
Serial Data (SDA)
This bi-directional signal is used to transfer data in
or out of the device. It is an open drain output that
may be wire-OR’ed with other open drain or open
collector signals on the bus. A pull up resistor must
be connected from Serial Data (SDA) to V
CC
. (Fig-
ure 4 indicates how the value of the pull-up resistor
can be calculated).
Chip Enable (E1, E2)
These input signals are used to set the value that
is to be looked for on bits b3 and b2 of the 7-bit De-
vice Select Code. These inputs must be tied to
V
CC
or V
SS
, to establish the Device Select Code.
When unconnected, the Chip Enable (E1, E2) sig-
nals are internally read as V
IL
(see Tables 10 and
11).
Write Control (WC)
This input signal is useful for protecting the entire
contents of the memory from inadvertent write op-
erations. Write operations are disabled to the en-
tire memory array when Write Control (WC) is
driven High. When unconnected, the signal is in-
ternally read as V
IL
, and Write operations are al-
lowed.
When Write Control (WC) is driven High, Device
Select and Address bytes are acknowledged,
Data bytes are not acknowledged.
Figure 4. Maximum R
L
Value versus Bus Capacitance (C
BUS
) for an I
2
C Bus
AI01665
VCC
CBUS
SDA
RL
MASTER
RL
SCL
CBUS
100
0
4
8
12
16
20
CBUS (pF)
M
)
10
1000
fc = 400kHz
fc = 100kHz
相關PDF資料
PDF描述
M25P64-VME6 4 Mbit Uniform Sector, Serial Flash Memory
M25P64-VMF6G 4 Mbit Uniform Sector, Serial Flash Memory
M25P64-VMF6 4 Mbit Uniform Sector, Serial Flash Memory
M25P64-VME6TP 4 Mbit Uniform Sector, Serial Flash Memory
M25P64-VME6TG 4 Mbit Uniform Sector, Serial Flash Memory
相關代理商/技術參數(shù)
參數(shù)描述
M24M01-DF_12 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1-Mbit serial I?2C bus EEPROM
M24M01-DFCS6TP/K 功能描述:電可擦除可編程只讀存儲器 1Mb serial IAC bus 1 MHz 1.7 to 5.5V RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8
M24M01-DFDW6TP 制造商:STMicroelectronics 功能描述:E-EPROM
M24M01-DFMN6TP 功能描述:電可擦除可編程只讀存儲器 1-Mbit I2C EEProm 256kB 1.7V to 5.5V RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8
M24M01-DWDW3TP/K 功能描述:EEPROM I2C 1MB 8TSSOP 制造商:stmicroelectronics 系列:- 包裝:剪切帶(CT) 零件狀態(tài):有效 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:1M(128K x 8) 速度:1MHz 接口:I2C,2 線串口 電壓 - 電源:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 125°C(TA) 封裝/外殼:8-TSSOP(0.173",4.40mm 寬) 供應商器件封裝:8-TSSOP 標準包裝:1