參數(shù)資料
型號: LV2024E45R
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN microwave power transistor
中文描述: S BAND, Si, NPN, RF POWER TRANSISTOR
文件頁數(shù): 3/8頁
文件大小: 62K
代理商: LV2024E45R
1997 Feb 18
3
Philips Semiconductors
Product specification
NPN microwave power transistor
LV2024E45R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
soldering temperature
open emitter
R
BE
= 47
open base
open collector
65
40
20
15
3
2
18
+200
200
235
V
V
V
V
A
W
°
C
°
C
°
C
T
mb
75
°
C
at 0.1 mm from case; t
10 s
T
mb
75
°
C.
(1) Region of permissible DC operation.
(2) Permissible extension provided R
BE
47
.
Fig.2 DC SOAR.
handbook, halfpage
MGL004
1
10
15
VCE (V)
IC
(A)
10
2
1
10
1
10
2
(1)
(2)
Fig.3
Power derating curve.
handbook,
0
50
100
200
20
0
16
150
12
8
4
MGD971
Ptot
(W)
Tmb (
°
C)
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