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| 型號(hào)： | LTC4357HMS8#TRPBF |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | 電源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8 |
| 封裝： | LEAD FREE, PLASTIC, MSOP-8 |
| 文件頁(yè)數(shù)： | 13/14頁(yè) |
| 文件大小： | 723K |
| 代理商： | LTC4357HMS8#TRPBF |
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LTC4357
4357fd
Design Example
The following design example demonstrates the calcula-
tions involved for selecting components in a 12V system
with 10A maximum load current (see Figure 4).
First,calculatetheRDS(ON)oftheMOSFETtoachievethede-
sired forward drop at full load. Assuming VDROP = 0.1V,
RDS(ON) ≤
VDROP
ILOAD
=
0.1V
10A
RDS(ON) ≤10mΩ
The Si4874DY offers a good solution, in an S8 package
with RDS(ON) = 10mΩ(max) and BVDSS of 30V.
The maximum power dissipation in the MOSFET is:
P = ILOAD2 RDS(ON) = (10A)2 10mΩ = 1W
With less than 39F of local bypass, the recommended RC
values of 100
Ω and 0.1F were used in Figure 4.
Since BVDSS + VIN is much less than 100V, output clamp-
ing is unnecessary.
Figure 3. Protecting Against Collapse of VDD During Reverse Recovery
applications inForMation
Figure 2. Reverse Recovery Produces Inductive Spikes at the IN and OUT Pin.
The Polarity of Step Recovery Spikes is Shown Across Parasitic Inductances
4357 F02
LTC4357
+
–
GND
IN
OUT
VDD
GATE
M1
REVERSE RECOVERY CURRENT
VIN
INPUT
SHORT
DIN
SBR1U-
150SA
INPUT PARASITIC
INDUCTANCE
COUT
10F
VOUT
CLOAD
DCLAMP
SMAT70A
OR
+
–
OUTPUT PARASITIC
INDUCTANCE
4357 F03
LTC4357
GND
IN
OUT
VDD
GATE
M1
OUTPUT PARASITIC
INDUCTANCE
VIN
R1
100
C1
100nF
INPUT
SHORT
COUT
VOUT
CLOAD
OR
Figure 4. 12V, 10A Diode-OR
4357 F04
LTC4357
GND
IN
OUT
VDD
GATE
M2
Si4874DY
VIN2
12V
R1
100
C1
0.1F
R1
100
C1
0.1F
LTC4357
GND
IN
OUT
VDD
GATE
M1
Si4874DY
VIN1
12V
VOUT
TO LOAD
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| LTC4357IDCB#PBF | 制造商:Linear Technology 功能描述:CONTROLLER DIODE SMD DFN-6 4357 制造商:Linear Technology 功能描述:CONTROLLER, DIODE, SMD, DFN-6, 4357 |
| LTC4357IDCB#TRMPBF | 功能描述:IC IDEAL DIODE CNTRLR 6-DFN RoHS:是 類別:集成電路 (IC) >> PMIC - O 圈控制器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 應(yīng)用:電池備份，工業(yè)/汽車，大電流開(kāi)關(guān) FET 型:- 輸出數(shù):5 內(nèi)部開(kāi)關(guān):是 延遲時(shí)間 - 開(kāi)啟:100ns 延遲時(shí)間 - 關(guān)閉:- 電源電壓:3 V ~ 5.5 V 電流 - 電源:250µA 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:16-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:16-SOIC N 包裝:帶卷 (TR) |
| LTC4357IDCB#TRPBF | 功能描述:IC IDEAL DIODE CNTRLR 6-DFN RoHS:是 類別:集成電路 (IC) >> PMIC - O 圈控制器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 應(yīng)用:電池備份，工業(yè)/汽車，大電流開(kāi)關(guān) FET 型:- 輸出數(shù):5 內(nèi)部開(kāi)關(guān):是 延遲時(shí)間 - 開(kāi)啟:100ns 延遲時(shí)間 - 關(guān)閉:- 電源電壓:3 V ~ 5.5 V 電流 - 電源:250µA 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:16-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:16-SOIC N 包裝:帶卷 (TR) |
| LTC4357IMS8#PBF | 功能描述:IC IDEAL DIODE CNTRLR 8-MSOP RoHS:是 類別:集成電路 (IC) >> PMIC - O 圈控制器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 應(yīng)用:電池備份，工業(yè)/汽車，大電流開(kāi)關(guān) FET 型:- 輸出數(shù):5 內(nèi)部開(kāi)關(guān):是 延遲時(shí)間 - 開(kāi)啟:100ns 延遲時(shí)間 - 關(guān)閉:- 電源電壓:3 V ~ 5.5 V 電流 - 電源:250µA 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:16-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:16-SOIC N 包裝:帶卷 (TR) |
| LTC4357IMS8#PBF | 制造商:Linear Technology 功能描述:CONTROLLER IC 制造商:Linear Technology 功能描述:IC, IDEAL DIODE CTRL, HIGH VOLT, MSOP-8 |
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