參數(shù)資料
型號(hào): LTC4071EMS8E#TRPBF
廠商: LINEAR TECHNOLOGY CORP
元件分類: 電源管理
英文描述: 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8
封裝: LEAD FREE, PLASTIC, MSOP-8
文件頁(yè)數(shù): 12/18頁(yè)
文件大?。?/td> 219K
代理商: LTC4071EMS8E#TRPBF
LTC4071
3
4071fb
elecTrical characTerisTics
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC4071 is tested under pulsed load conditions such that
TJ = TA. The LTC4071E is guaranteed to meet performance specifications
for junction temperatures from 0°C to 85°C. Specifications over the
The l denotes the specifications which apply over the full operating
junction temperature range. Conditions are VNTC = VADJ = VCC, VLBSEL = GND, TJ = 25°C unless otherwise specified. Current into a pin
is positive and current out of a pin is negative. All voltages are referenced to GND unless otherwise noted. (Note 2)
–40°C to 125°C operating junction temperature range are assured by
design, characterization and correlation with statistical process controls.
The LTC4071I is guaranteed over the full –40°C to 125°C operating
junction temperature range. Note that the maximum ambient temperature
consistent with these specifications is determined by specific operation
conditions in conjunction with board layout, the rated package thermal
impedance and other environmental factors.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Low Battery Disconnect
ILEAK
Battery Disconnect Leakage
Current
VCC < VBAT = 2.65V
l
0.01
25
nA
RDSON
Resistance of VCC – BAT Switch IBAT = –1mA, VHBO High
4
6
Ω
VLBD
Low Battery Disconnect
VBAT Falling, IBAT = –1mA, LBSEL = VCC, 0°C < Temp < 125°C
2.60
2.70
2.79
V
VBAT Falling, IBAT = –1mA, LBSEL = VCC
l
2.52
2.70
2.79
V
VBAT Falling, IBAT = –1mA, LBSEL = GND, 0°C < Temp < 125°C
3.05
3.20
3.28
V
VBAT Falling, IBAT = –1mA, LBSEL = GND
l
2.95
3.20
3.28
V
VLBC_BAT
Low Battery Connect
VBAT Rising, IBAT = –1mA, LBSEL = VCC
2.97
V
VBAT Rising, IBAT = –1mA, LBSEL = GND
3.53
V
VLBC_VCC
Low Battery Connect
VCC Rising, LBSEL = VCC
VCC Rising, LBSEL = GND
3.6
4.19
V
High Battery Status
VHBTH
HBO Threshold (VFLOAT – VCC)
VCC Rising
l
15
40
75
mV
VHBHY
Hysteresis
100
mV
Status Output: HBO
VOL
CMOS Output Low
ISINK = 1mA, VCC = 3.7V
0.5
V
VOH
CMOS Output High
ISOURCE = –0.5mA, ICC = 1.5mA
VCC – 0.6
V
Selection Inputs: ADJ, LBSEL
VADJ_IL
ADJ VIL
Input Logic Low Level
l
0.3
V
VADJ_IH
ADJ VIH
Input Logic High Level
l
VCC – 0.3
V
IADJ(Z)
Allowable ADJ Leakage Current
in Floating State
l
±3
A
VLBSEL_IL
LBSEL VIL
Input Logic Low Level
l
250
mV
VLBSEL_IH
LBSEL VIH
Input Logic High Level
l
1.4
V
ILBSEL
LBSEL Leakage Current
0 ≤ LBSEL ≤ VCC
l
–5
0
5
nA
NTC
INTC
NTC Leakage Current
0V ≤ NTC ≤ VCC
l
–5
0
5
nA
INTCBIAS
Average NTCBIAS Sink Current
Pulsed Duty Cycle < 0.002%
30
50
pA
NTCTH1
NTC Comparator Falling
Thresholds
VNTC as Percentage of VNTCBIAS Amplitude
35.5
36.5
38
%
NTCTH2
28.0
29.0
30.5
%
NTCTH3
21.8
22.8
23.8
%
NTCTH4
16.8
17.8
18.8
%
NTCHY
Hysteresis
30
mV
VFLOAT(NTC) Delta Float Voltage per NTC
Comparator Step
NTC Falling Below One of the NTCTH Thresholds
ADJ = 0V
ADJ = Floating
ADJ = VCC
–57
–82
–107
–50
–75
–100
–43
–68
–93
mV
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