參數(shù)資料
型號: LTC4012IUF-1#TRPBF
廠商: LINEAR TECHNOLOGY CORP
元件分類: 穩(wěn)壓器
英文描述: SWITCHING CONTROLLER, 633 kHz SWITCHING FREQ-MAX, PQCC20
封裝: 4 X 4 MM, 0.75 MM HEIGHT, LEAD FREE, PLASTIC, MO-220WGGD-1, QFN-20
文件頁數(shù): 15/28頁
文件大小: 381K
代理商: LTC4012IUF-1#TRPBF
LTC4012/
LTC4012-1/LTC4012-2
4012fa
RIN should not be less than 2.37k or more than 6.04k. Val-
ues of RINgreaterthan3.01kmaycausesomereductionin
programmed current accuracy. Use these equations and
guidelines, as represented in Table 6, to help select the cor-
rect inductor value. This table was developed for C-grade
partstomaintainmaximumILnear0.6IMAXwithfPWMat
550kHz and VBAT = 0.5 VCLP (the point of maximum IL),
assuming that inductor value could also vary by 25% at
IMAX. For I-grade parts, reduce maximum IL to less than
0.4 IMAX, but only if the IC will actually be used to charge
batteries over the wider I-grade temperature range. In that
case, a good starting point can be found by multiplying
the inductor values shown in Table 6 by a factor of 1.6 and
roundinguptotheneareststandardvalue.
Table 6. Minimum Typical Inductor Values
VCLP
L1
(Typ)
IMAX
RSENSE
RIN
RPROG
<10V
≥10H
1A
100mΩ
3.01k
26.7k
10V to 20V
≥20H
1A
100mΩ
3.01k
26.7k
>20V
≥28H
1A
100mΩ
3.01k
26.7k
<10V
≥5.1H
2A
50mΩ
3.01k
26.7k
10V to 20V
≥10H
2A
50mΩ
3.01k
26.7k
>20V
≥14H
2A
50mΩ
3.01k
26.7k
<10V
≥3.4H
3A
33mΩ
3.01k
26.7k
10V to 20V
≥6.8H
3A
33mΩ
3.01k
26.7k
>20V
≥9.5H
3A
33mΩ
3.01k
26.7k
<10V
≥2.5H
4A
25mΩ
3.01k
26.7k
10V to 20V
≥5.1H
4A
25mΩ
3.01k
26.7k
>20V
≥7.1H
4A
25mΩ
3.01k
26.7k
To guarantee that a chosen inductor is optimized in any
given application, use the design equations provided and
perform bench evaluation in the target application, par-
ticularly at duty cycles below 20% or above 80% where
PWM frequency can be much less than the nominal value
of 550kHz.
TGATE BOOST Supply
Use the external components shown in Figure 11 to de-
velop a bootstrapped BOOST supply for the TGATE FET
driver. A good set of equations governing selection of the
two capacitors is:
C
Q
V
C
G
1
20
4 5
2 20 1
=
.
,
where QG is the rated gate charge of the top external NFET
with VGS = 4.5V. The maximum average diode current is
then given by:
ID = QG 665kHz
To improve efficiency by increasing VGS applied to the
top FET, substitute a Schottky diode with low reverse
leakage for D1.
PWM jitter has been observed in some designs operating
at higher VIN/VOUT ratios. This jitter does not substantially
affect DC charge current accuracy. A series resistor with a
value of 5Ω to 20Ω can be inserted between the cathode
of D1 and the BOOST pin to remove this jitter, if present.
A resistor case size of 0603 or larger is recommended to
lower ESL and achieve the best results.
applications inForMation
Figure 11. TGATE Boost Supply
20
17
BOOST
INTVDD
18
SW
LTC4012
4012 F11
C2
2F
C1
0.1F
L1
TO
RSENSE
D1
1N4148
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