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LTC1863/LTC1867
4
18637fa
DIGITAL INPUTS AND DIGITAL OUTPUTS The l denotes the specications which apply over the
full operating temperature range, otherwise specications are at TA = 25°C. (Note 5)
POWER REQUIREMENTS
TIMING CHARACTERISTICS The l denotes the specications which apply over the full operating temperature
range, otherwise specications are at TA = 25°C. (Note 5)
The
l denotes the specications which apply over the full operating temperature
range, otherwise specications are at TA = 25°C. (Note 5)
SYMBOL
PARAMETER
CONDITIONS
LTC1863/LTC1867/LTC1867A
UNITS
MIN
TYP
MAX
VDD
Supply Voltage
(Note 9)
4.75
5.25
V
IDD
Supply Current
fSAMPLE = 200ksps
NAP Mode
SLEEP Mode
l
1.3
150
0.2
1.8
3
mA
μA
PDISS
Power Dissipation
l
6.5
9
mW
SYMBOL
PARAMETER
CONDITIONS
LTC1863/LTC1867/LTC1867A
UNITS
MIN
TYP
MAX
fSAMPLE
Maximum Sampling Frequency
l
200
kHz
tCONV
Conversion Time
l
33.5
μs
tACQ
Acquisition Time
l
1.5
1.1
μs
fSCK
SCK Frequency
40
MHz
t1
CS/CONV High Time
Short CS/CONV Pulse Mode
l
40
100
ns
t2
SDO Valid After SCK↓
CL = 25pF (Note 11)
l
13
22
ns
t3
SDO Valid Hold Time After SCK↓
CL = 25pF
l
511
ns
t4
SDO Valid After CS/CONV↓
CL = 25pF
l
10
30
ns
t5
SDI Setup Time Before SCK↑
l
15
–6
ns
t6
SDI Hold Time After SCK↑
l
10
4
ns
t7
SLEEP Mode Wake-Up Time
CREFCOMP = 10μF, CVREF = 2.2μF
60
ms
t8
Bus Relinquish Time After CS/CONV↑
CL = 25pF
l
20
40
ns
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime
Note 2: All voltage values are with respect to GND (unless otherwise noted).
Note 3: When these pin voltages are taken below GND or above VDD, they
will be clamped by internal diodes. This product can handle input currents
of greater than 100mA without latchup.
SYMBOL
PARAMETER
CONDITIONS
LTC1863/LTC1867/LTC1867A
UNITS
MIN
TYP
MAX
CIN
Digital Input Capacitance
2pF
VOH
High Level Output Voltage (SDO)
VDD = 4.75V, IO = –10μA
VDD = 4.75V, IO = –200μA
l
4
4.75
4.74
V
VOL
Low Level Output Voltage (SDO)
VDD = 4.75V, IO = 160μA
VDD = 4.75V, IO = 1.6mA
l
0.05
0.1
0.4
V
ISOURCE
Output Source Current
SDO = 0V
–32
mA
ISINK
Output Sink Current
SDO = VDD
19
mA
Hi-Z Output Leakage
Hi-Z Output Capacitance
CS/CONV = High, SDO = 0V or VDD
CS/CONV = High (Note 10)
l
±10
15
μA
pF
Data Format
Unipolar
Bipolar
Straight Binary
Two’s Complement