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參數(shù)資料
| 型號： | LTC1760 |
| 廠商： | Linear Technology Corporation |
| 英文描述： | Dual Smart Battery System Manager |
| 中文描述： | 雙智能電池系統(tǒng)管理 |
| 文件頁數(shù)： | 35/44頁 |
| 文件大?。?/td> | 379K |
| 代理商： | LTC1760 |
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LTC1760
35
sn1760 1760is
P
MAIN
= V
OUT
/V
IN
(I
MAX
)
2
(1 +
δΤ
)R
DS(ON)
+ k(V
IN
)
2
(I
MAX
)(C
RSS
)(f)
P
SYNC
= (V
IN
– V
OUT
)/V
IN
(I
MAX
)
2
(1 +
δΤ
) R
DS(ON)
Where
δΤ
is the temperature dependency of R
DS(ON)
and
k is a constant inversely related to the gate drive current.
Both MOSFETs have I
2
R losses while the topside
N-channel equation includes an additional term for transi-
tion losses, which are highest at high input voltages. For
V
IN
< 20V the high current efficiency generally improves
with larger MOSFETs, while for V
IN
> 20V the transition
losses rapidly increase to the point that the use of a higher
R
DS(ON)
device with lower C
RSS
actually provides higher
efficiency. The synchronous MOSFET losses are greatest
at high input voltage or during a short-circuit when
the duty cycle in this switch is nearly 100%. The term
(1 +
δΤ
) is generally given for a MOSFET in the form ofa
normalized R
DS(ON)
vs Temperature curve, but
δ
= 0.005/
°
C
can be used as an approximation for low voltage MOSFETs.
C
RSS
is usually specified in the MOSFET characteristics.
The constant k = 1.7 can be used to estimate the contribu-
tions of the two terms in the main switch dissipation
equation.
If the LTC1760 charger is to operate in low dropout mode
or with a high duty cycle greater than 85%, then the
topside N-channel efficiency generally improves with a
larger MOSFET. Using asymmetrical MOSFETs may achieve
cost savings or efficiency gains.
The Schottky diode D1, shown in the Typical Application,
conducts during the dead-time between the conduction of
the two power MOSFETs. This prevents the body diode of
the bottom MOSFET from turning on and storing charge
during the dead-time, which could cost as much as 1% in
efficiency. A 1A Schottky is generally a good size for 4A
regulators due to the relatively small average current.
Larger diodes can result in additional transition losses due
to their larger junction capacitance. The diode may be
omitted if the efficiency loss can be tolerated.
Calculating IC Operating Current
This section shows how to use the values supplied in the
Electrical Characteristics table to estimate operating cur-
rent for a given application.
APPLICATIOU
W
U
U
The total IC operating current through DCIN when AC is
present and batteries are charging (I
DCIN_CHG
) is given by:
I
DCIN_CHG
= I
CH1
+ I
VCC2_AC1
+ I
SAFETY1
+ I
SAFETY2
+
I
VLIM
+ I
ILIM
+ I
SMB
+ I
SMB_BAT1
+ I
SMB_BAT2
+ I
SMBALERT
where:
I
CH1
is defined in “Electrical Characteristics”.
I
VCC2_AC1
is defined in “Electrical Characteristics”.
I
SAFETYX
is the current used to test the batterythermistor
connected to SAFETY1 OR SAFETY2.
For thermistors that are OVER-RANGE:
I
SAFETYX
= 2/64 V
VCC2
/(RXB + R
THX
)
For thermistors that are COLD-RANGE:
I
SAFETYX
= 4/64 V
VCC2
/(RXB + R
THX
)
For thermistors that are IDEAL-RANGE:
I
SAFETYX
= 4/64 V
VCC2
/(RXB + R
THX
) + 2/64 V
VCC2
/
(R1A +R
THX
)
For thermistors that are HOT-RANGE:
I
SAFETYX
= 4/64 V
VCC2
/(RXB + R
THX
) + 4/64 V
VCC2
/
(R1A +R
THX
)
R
THX
is the impedance of the battery’s thermistor to
ground.
RXB = 54.9k
RXA = 1.13k
Sample calculation of I
SAFETYX
with V
VCC2
= 5.2V
Thermistor Impedance
R
THX
(
)
100k
3.3k
400
Thermistor Range
I
SAFETYX
(
μ
A)
OVER_RANGE
IDEAL_RANGE
UNDER_RANGE
1.05
42.2
218
I
VLIM
= V
VCC2
/(R
VLIMIT
+ R
LIM_PU
).
I
ILIM
= V
VCC2
/(R
ILIMIT
+ R
LIM_PU
).
R
LIM_PU
is the typical pull-up impedance at V
LIMIT
and I
LIMIT.
R
LIM_PU
= 34k.
R
VLIMIT
is the value of the resistance from V
LIMIT
to
GND.
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