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參數(shù)資料
| 型號(hào)： | LTC1693-3 |
| 廠商： | Linear Technology Corporation |
| 英文描述： | High Speed Single N-Channel MOSFET Drivers(高速，單路P溝道MOS場(chǎng)效應(yīng)管驅(qū)動(dòng)器) |
| 中文描述： | 高速單N溝道MOSFET驅(qū)動(dòng)器（高速，單路馬鞍山P溝道場(chǎng)效應(yīng)管驅(qū)動(dòng)器） |
| 文件頁(yè)數(shù)： | 8/20頁(yè) |
| 文件大?。?/td> | 259K |
| 代理商： | LTC1693-3 |
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8
LTC1693
APPLICATIO
S I
N
FOR
ATIO
U
Overview
The LTC1693 single and dual drivers allow 3V- or 5V-based
digital circuits to drive power MOSFETs at high speeds. A
power MOSFET’s gate-charge loss increases with switch-
ing frequency and transition time. The LTC1693 is capable
of driving a 1nF load with a 16ns rise and fall time using a
V
CC
of 12V. This eliminates the need for higher voltage
supplies, such as 18V, to reduce the gate charge losses.
The LTC1693’s 360
μ
A quiescent current is an order of
magnitude lower than most other drivers/buffers. This
improves system efficiency in both standby and switching
operation. Since a power MOSFET generally accounts for
the majority of power loss in a converter, addition of the
LT1693 to a high power converter design greatly improves
efficiency, using very little board space.
The LTC1693-1 and LTC1693-2 are dual drivers that are
electrically isolated. Each driver has independent opera-
tion from the other. Drivers may be used in different parts
of a system, such as a circuit requiring a floating driver and
the second driver being powered with respect to ground.
W
U
Input Stage
The LTC1693 employs 3V CMOS compatible input thresh-
olds that allow a low voltage digital signal to drive standard
power MOSFETs. The LTC1693 incorporates a 4V internal
regulator to bias the input buffer. This allows the 3V CMOS
compatible input thresholds (V
IH
= 2.6V, V
IL
= 1.4V) to be
independent of variations in V
CC
. The 1.2V hysteresis
between V
IH
and V
IL
eliminates false triggering due to
ground noise during switching transitions. The LTC1693’s
input buffer has a high input impedance and draws less
than 10
μ
A during standby.
Output Stage
The LTC1693’s output stage is essentially a CMOS in-
verter, as shown by the P- and N-channel MOSFETs in
Figure 1 (P1 and N1). The CMOS inverter swings rail-to-
rail, giving maximum voltage drive to the load. This large
voltage swing is important in driving external power
MOSFETs, whose R
DS(ON)
is inversely proportional to its
gate overdrive voltage (V
GS
– V
T
).
P1
C
GD
V
DRAIN
POWER
MOSFET
L
(LOAD INDUCTOR
OR STRAY LEAD
INDUCTANCE)
C
GS
OUT
GND
LTC1693
1693 F01
N1
V
+
V
CC
Figure 1. Capacitance Seen by OUT During Switching
The LTC1693’s output peak currents are 1.4A (P1) and
1.7A (N1) respectively. The N-channel MOSFET (N1) has
higher current drive capability so it can discharge the
power MOSFET’s gate capacitance during high-to-low
signal transitions. When the power MOSFET’s gate is
pulled low by the LTC1693, its drain voltage is pulled high
by its load (e.g., a resistor or inductor). The slew rate of the
drain voltage causes current to flow back to the MOSFETs
gate through its gate-to-drain capacitance. If the MOSFET
driver does not have sufficient sink current capability (low
output impedance), the current through the power
MOSFET’s Miller capacitance (C
GD
) can momentarily pull
the gate high, turning the MOSFET back on.
Rise/Fall Time
Since the power MOSFET generally accounts for the ma-
jority of power lost in a converter, it’s important to quickly
turn it either fully “on” or “off” thereby minimizing the tran-
sition time in its linear region. The LTC1693 has rise and
fall times on the order of 16ns, delivering about 1.4A to 1.7A
of peak current to a 1nF load with a V
CC
of only 12V.
The LTC1693’s rise and fall times are determined by the
peak current capabilities of P1 and N1. The predriver,
shown in Figure 1 driving P1 and N1, uses an adaptive
method to minimize cross-conduction currents. This is
done with a 6ns nonoverlapping transition time. N1 is fully
turned off before P1 is turned-on and vice-versa using this
6ns buffer time. This minimizes any cross-conduction
currents while N1 and P1 are switching on and off yet is
short enough to not prolong their rise and fall times.
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| LTC1693-3CMS8 | 功能描述:IC MOSFET DVR N-CH SINGLE 8-MSOP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1693-3CMS8#PBF | 功能描述:IC MOSFET DVR N-CH SINGLE 8-MSOP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1693-3CMS8#TR | 功能描述:IC DRIVER MOSF SGL N-CH HS 8MSOP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
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