參數(shù)資料
型號(hào)： LTC1645I
廠商： Linear Technology Corporation
英文描述： Low Power Timer 8-SOIC 0 to 70
中文描述： 雙通道熱插拔控制器/電源序列
文件頁(yè)數(shù)： 9/24頁(yè)
文件大?。?/td> 312K
代理商： LTC1645I
9
LTC1645
APPLICATIOU
No bulk capacitance is present to slow the rate of rise and
heavily damp the parasitic resonance. Instead, the fast
edge shock excites a resonant circuit formed by a combi-
nation of wiring harness, backplane and circuit board
parasitic inductances and FET capacitance. In theory, the
peak voltage should rise to 2X the input supply, but in
practice the peak can reach 2.5X, owing to the effects of
voltage dependent FET capacitance.
The absolute maximum V
CCn
potential for the LTC1645 is
13.2V; any circuit with an input of 5V or greater should be
scrutinized for ringing. A well-bypassed backplane should
not escape suspicion: circuit board trace inductances of as
little as 10nH can produce sufficient ringing to overvoltage
V
CC
.
Check ringing with a fast storage oscilloscope (such as a
LECROY 9314AL DSO) by attaching coax or a probe to V
CC
W
U
U
(a) Undamped V
CC
Waveform (48" Leads)
(b) Undamped V
CC
Waveform (8" Leads)
Figure 5. Ring Experiment
and GND, then repeatedly inserting the circuit board into
the backplane. Figures 5a and 5b show typical results in a
12V application with different V
CC
lead lengths. The peak
amplitude reaches 22V, breaking down the ESD protection
diode in the process.
There are two methods for eliminating ringing: clipping
and snubbing. A transient voltage suppressor is an effec-
tive means of limiting peak voltage to a safe level.
Figure6 shows the effect of adding an ON Semiconductor,
1SMA12CAT3, on the waveform of Figure 5.
Figures 7a and 7b show the effects of snubbing with
different RC networks. The capacitor value is chosen as
10X to 100X the FET C
OSS
under bias and R is selected for
best damping—1
to 50
depending on the value of
parasitic inductance.
V
OUT
0.1
μ
F
1645 F05
10
R1
0.01
12V
IRF7413
C
LOAD
+
+
LTC1645
POWER
LEADS
SCOPE
PROBE
8'
1
μ
s/DIV
1645 F05a
4
0V
24V
1
μ
s/DIV
4
1645 F05b
0V
24V
相關(guān)PDF資料
PDF描述
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LTC1645IS8 Low Power Timer 8-PDIP 0 to 70
LTC1649 Low Power Timer 8-SOIC -40 to 85
LTC1649CS Low Power Timer 8-SOIC -40 to 85
LTC1666 12-Bit, 14-Bit, 16-Bit, 50Msps DACs
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LTC1645IS 功能描述:IC CTRLR SEQ HOTSWAP DUAL 14SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - 熱交換 系列:- 產(chǎn)品培訓(xùn)模塊:Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:100 系列:- 類型:熱插拔開(kāi)關(guān) 應(yīng)用:通用 內(nèi)部開(kāi)關(guān):是 電流限制:可調(diào) 電源電壓:9 V ~ 13.2 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:10-WFDFN 裸露焊盤(pán) 供應(yīng)商設(shè)備封裝:10-TDFN-EP（3x3） 包裝:管件
LTC1645IS#PBF 功能描述:IC CTLR HOT SWAP SEQ DUAL 14SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - 熱交換 系列:- 產(chǎn)品培訓(xùn)模塊:Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:100 系列:- 類型:熱插拔開(kāi)關(guān) 應(yīng)用:通用 內(nèi)部開(kāi)關(guān):是 電流限制:可調(diào) 電源電壓:9 V ~ 13.2 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:10-WFDFN 裸露焊盤(pán) 供應(yīng)商設(shè)備封裝:10-TDFN-EP（3x3） 包裝:管件
LTC1645IS#TR 功能描述:IC CTRLR SEQ HOTSWAP DUAL 14SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - 熱交換 系列:- 產(chǎn)品培訓(xùn)模塊:Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:100 系列:- 類型:熱插拔開(kāi)關(guān) 應(yīng)用:通用 內(nèi)部開(kāi)關(guān):是 電流限制:可調(diào) 電源電壓:9 V ~ 13.2 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:10-WFDFN 裸露焊盤(pán) 供應(yīng)商設(shè)備封裝:10-TDFN-EP（3x3） 包裝:管件
LTC1645IS#TRPBF 功能描述:IC CTRLR SEQ HOTSWAP DUAL 14SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - 熱交換 系列:- 產(chǎn)品培訓(xùn)模塊:Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:100 系列:- 類型:熱插拔開(kāi)關(guān) 應(yīng)用:通用 內(nèi)部開(kāi)關(guān):是 電流限制:可調(diào) 電源電壓:9 V ~ 13.2 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:10-WFDFN 裸露焊盤(pán) 供應(yīng)商設(shè)備封裝:10-TDFN-EP（3x3） 包裝:管件
LTC1645IS8 功能描述:IC CTRLR SEQ HOTSWAP DUAL 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - 熱交換 系列:- 產(chǎn)品培訓(xùn)模塊:Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:100 系列:- 類型:熱插拔開(kāi)關(guān) 應(yīng)用:通用 內(nèi)部開(kāi)關(guān):是 電流限制:可調(diào) 電源電壓:9 V ~ 13.2 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:10-WFDFN 裸露焊盤(pán) 供應(yīng)商設(shè)備封裝:10-TDFN-EP（3x3） 包裝:管件
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