參數(shù)資料
型號(hào)： LT3150CGN#TRPBF
廠商： Linear Technology
文件頁(yè)數(shù)： 14/20頁(yè)
文件大?。?/td> 259K
描述： IC REG CTRLR SGL POS ADJ 16-SSOP
產(chǎn)品培訓(xùn)模塊： More Information on LDOs
標(biāo)準(zhǔn)包裝： 2,500
類(lèi)型： 正，可調(diào)式
輸出數(shù)： 1
輸出電壓： 2.5 V ~ 18.4 V
電流 - 電源： 12mA
輸入電壓： 1.5 V ~ 10 V，10 V ~ 20 V
工作溫度： 0°C ~ 70°C
封裝/外殼： 16-SSOP（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝： 16-SSOP
包裝： 帶卷 (TR)
14
LT3150
3150f
APPLICATIO S I FOR ATIO
U
U
U
Figure 1. Ceramic Capacitor DC Bias Characteristics
Figure 2. Ceramic Capacitor Temperature Characteristics
DC BIAS VOLTAGE (V)
3150 F01
20
0
20
40
60
80
100
0
4
8    10
2
6
12   14
X5R
Y5V
16
BOTH CAPACITORS ARE 16V,
1210 CASE SIZE, 10礔
TEMPERATURE (癈)
50
40
20
0
20
40
60
80
100
25
75
3150 F02
25    0
50
100   125
Y5V
X5R
BOTH CAPACITORS ARE 16V,
1210 CASE SIZE, 10礔
Figures 1 and 2 show voltage coefficient and temperature
coefficient comparisons between Y5V and X5R material.
With the critical pole in the LT3150 feedback loop being set
by the absolute value of the output capacitor, it is obvious
why Linear Technology strongly recommends the use of
ceramic capacitors with X5R or X7R dielectric material.
MOSFET Selection
MOSFET selection criteria include threshold voltage
V
GS(TH)
, maximum continuous drain current I
D
, on-resis-
tance R
DS(ON)
, maximum drain-to-source voltage V
DS
 and
package thermal resistance R
TH(JA)
.
Linear Technology recommends the use of a logic-level
threshold MOSFET in LT3150 applications. The V
GS
 range,
as defined by the threshold voltage and the load current
range, fits well within the boost regulators capability and
the output swing range of the error amplifier. The MOSFETs
continuous drain current rating must equal or exceed the
maximum load current and the maximum drain-to-source
voltage must exceed the maximum input voltage.
The most critical specification is the MOSFET R
DS(ON)
.
Calculate the required R
DS(ON)
 from the following formula:
MOSFET R
DS(ON)
d
V
V
I
IN MIN
OUT MIN
OUT MAX
(    )
(    )
(
)

"
3
The additional factor of three in the equations denomina-
tor accounts for production variation, the temperature
coefficient of R
DS(ON)
, voltage dips in V
IN
 during transient
output load steps and other operating point characteris-
tics. Although the factor of three is slightly conservative,
this imposes no cost penalty. As an example, consider the
1.8V to 1.5V at 4A application on the front page. Assuming
the 1.8V input and the 1.5V output each have a ?%
tolerance,
R
DS(ON)
=
d
&
( .   "  .   )( .   "  .   )
"
.
0 95  1 8
0 95  1 5
3  4
23 8
V
V
A
m
A Siliconix Si4410 MOSFET with an R
DS(ON)
 of 20m& is a
close match. Although the Si4410s 30V maximum V
DS
and 8A maximum I
D
  ratings exceed the applications
requirements, the Si4410s low cost makes it an excellent
choice.
As the final criteria, consider the thermal resistance R
TH(JA)
of the MOSFETs package. The temperature rise in the
MOSFET must be kept under control and within the
manufacturers maximum junction temperature specifica-
tion. The power dissipated in the MOSFET is calculated by:
P
MOSFET
 = (V
IN
 V
OUT
) " I
OUT
In the design example, P
MOSFET
 = (1.8V  1.5V) " 4A =
1.2W. The Si4410s R
TH(JA)
 is 50癈/W for its S0-8 pack-
age, which translates to a 60癈 temperature rise above
ambient. MOSFET manufacturers have significantly low-
ered the thermal resistance of modern devices with im-
proved packages. These packages provide exposed
backsides that directly transfer heat to the PCB board.
These packages enable LT3150 applications with much
higher output currents while keeping the MOSFET tem-
perature in control.
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