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參數(shù)資料
| 型號(hào)： | LT1160 |
| 廠商： | Linear Technology Corporation |
| 英文描述： | Half-/Full-Bridge N-Channel Power MOSFET Drivers(半橋,N-溝道功率MOS場(chǎng)效應(yīng)管驅(qū)動(dòng)器) |
| 中文描述： | Half-/Full-Bridge N溝道功率MOSFET驅(qū)動(dòng)器（半橋的N溝道功率馬鞍山場(chǎng)效應(yīng)管驅(qū)動(dòng)器） |
| 文件頁數(shù)： | 8/16頁 |
| 文件大?。?/td> | 287K |
| 代理商： | LT1160 |
8
LT1160/LT1162
TIW
W
OPERATIOU
The LT1160 (or 1/2 LT1162) incorporates two indepen-
dent driver channels with separate inputs and outputs. The
inputs are TTL/CMOS compatible; they can withstand
input voltages as high as V
+
. The 1.4V input threshold is
regulated and has 300mV of hysteresis. Both channels are
noninverting drivers. The internal logic prevents both
outputs from simultaneously turning on under any input
conditions. When both inputs are high both outputs are
actively held low.
The floating supply for the top driver is provided by a
bootstrap capacitor between the Boost pin and the Top
Source pin. This capacitor is recharged each time the
negative plate goes low in PWM operation.
The undervoltage detection circuit disables both channels
when V
+
is below the undervoltage trip point. A separate
(Refer to Functional Diagram)
UV detect block disables the high side channel when
V
BOOST
– V
TSOURCE
is below its own undervoltage trip
point.
The top and bottom gate drivers in the LT1160 each utilize
two gate connections: 1) a gate drive pin, which provides
the turn on and turn off currents through an optional series
gate resistor, and 2) a gate feedback pin which connects
directly to the gate to monitor the gate-to-source voltage.
Whenever there is an input transition to command the
outputs to change states, the LT1160 follows a logical
sequence to turn off one MOSFET and turn on the other.
First, turn-off is initiated, then V
GS
is monitored until it has
decreased below the turn-off threshold, and finally the
other gate is turned on.
10V
2V
IN TOP
IN BOTTOM
TOP GATE
DRIVER
BOTTOM
GATE
DRIVER
2V
0.8V
2V
0.8V
12V
0V
12V
0V
t
r
t
D1
t
D3
10V
2V
t
r
t
D2
t
D4
t
f
t
D3
t
D2
t
f
t
D4
1160/62 TD
t
D1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LT1161 | 1-of-8 Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70 |
| LT1161C | Quad Protected High-Side MOSFET Driver |
| LT1161CN | Quad Protected High-Side MOSFET Driver |
| LT1161CS | Quad Protected High-Side MOSFET Driver |
| LT1161I | Quad Protected High-Side MOSFET Driver |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LT1160_1 | 制造商:LINEAR 制造商全稱:LINEAR 功能描述:Half-/Full-Bridge N-Channel Power MOSFET Drivers |
| LT1160CN | 功能描述:IC PWR MOSFET DRIVER N-CH 14-DIP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LT1160CN#PBF | 功能描述:IC PWR MOSFET DRIVER N-CH 14-DIP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LT1160CS | 功能描述:IC PWR MOSFET DRIVER N-CH 14SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LT1160CS#PBF | 功能描述:IC PWR MOSFET DRIVER N-CH 14SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:高端和低端，獨(dú)立 輸入類型:非反相 延遲時(shí)間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1381 (CN2011-ZH PDF) |
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