參數(shù)資料
型號: LT1158
廠商: Linear Technology Corporation
英文描述: Half Bridge N-Channel Power MOSFET Driver(半橋,N-溝道功率MOS場效應管驅(qū)動器)
中文描述: 半橋N溝道功率MOSFET驅(qū)動器(半橋的N溝道功率馬鞍山場效應管驅(qū)動器)
文件頁數(shù): 5/20頁
文件大?。?/td> 346K
代理商: LT1158
LT1158
5
SUPPLY VOLTAGE (V)
0
T
200
250
300
40
LT1158 G13
150
100
0
10
20
30
50
400
350
C
GATE
= 10000pF
C
GATE
= 1000pF
C
GATE
= 3000pF
5
15
25
35
Top Gate Rise Time
Top Gate Fall Time
SUPPLY VOLTAGE (V)
0
T
200
250
300
40
LT1158 G14
150
100
0
10
20
30
50
400
350
C
GATE
= 10000pF
C
GATE
= 1000pF
C
GATE
= 3000pF
5
15
25
35
Transition Times vs R
Gate
GATE RESISTANCE (
)
0
T
600
800
80
LT1158 G15
400
200
0
20
40
60
100
700
500
300
100
10
30
50
70
90
V
+
= 12V
C
GATE
= 3000pF
RISE TIME
FALL TIME
Pin 1 (Boost Drive):
Recharges and clamps the bootstrap
capacitor to 14.5V higher than pin 13 via an external diode.
Pin 2 (V
+
):
Main supply pin; must be closely decoupled to
the ground pin 7.
Pin 3 (Bias):
Decouple point for the internal 2.6V bias
generator. Pin 3 cannot have any external DC loading.
Pin 4 (Enable):
When left open, the LT1158 operates
normally. Pulling pin 4 low holds both MOSFETs off
regardless of the input state.
Pin 5 (Fault):
Open collector NPN output which turns on
when V12 – V11 exceeds the fault conduction threshold.
Pin 6 (Input):
Taking pin 6 high turns the top MOSFET on
and bottom MOSFET off; pin 6 low reverses these states.
An input latch captures each low state, ignoring an ensu-
ing high until pin 13 has gone below 2.6V.
Pin 8 (Bottom Gate Feedback):
Must connect directly to
the bottom power MOSFET gate. The top MOSFET turn-on
is inhibited until pin 8 has discharged to 1.5V. A hold-on
current source also feeds the bottom gate via pin 8.
Pin 9 (Bottom Gate Drive):
The high current drive point
for the bottom MOSFET. When a gate resistor is used, it is
inserted between pin 9 and the gate of the MOSFET.
PI FU
U
Pin 10 (V
+
):
Bottom side driver supply; must be con-
nected to the same supply as pin 2.
Pin 11 (Sense Negative):
The floating reference for the
current limit comparator. Connects to the low side of a
current shunt or Kelvin lead of a current-sensing MOSFET.
When pin 11 is within 1.2V of V
+
, current limit is inhibited.
Pin 12 (Sense Positive):
Connects to the high side of the
current shunt or sense lead of a current-sensing MOSFET.
A built-in offset between pins 11 and 12 in conjunction
with R
SENSE
sets the top MOSFET short-circuit current.
Pin 13 (Top Source):
Top side driver return; connects to
MOSFET source and low side of the bootstrap capacitor.
Pin 14 (Top Gate Feedback):
Must connect directly to the
top power MOSFET gate. The bottom MOSFET turn-on is
inhibited until V14 – V13 has discharged to 1.75V. An on-
chip charge pump also feeds the top gate via pin 14.
Pin 15 (Top Gate Drive):
The high current drive point for
the top MOSFET. When a gate resistor is used, it is inserted
between pin 15 and the gate of the MOSFET.
Pin 16 (Boost):
Top side driver supply; connects to the
high side of the bootstrap capacitor and to a diode either
from supply (V
+
< 10V) or from pin 1 (V
+
> 10V).
TYPICAL PERFOR
M
A
CE CHARACTERISTICS
U
相關PDF資料
PDF描述
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LT1161C Quad Protected High-Side MOSFET Driver
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相關代理商/技術參數(shù)
參數(shù)描述
LT1158C 制造商:LINER 制造商全稱:Linear Technology 功能描述:Half Bridge N-Channel Power MOSFET Driver
LT1158CN 功能描述:IC MOSFET DRVR 1/2BRDG NCH 16DIP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅(qū)動器 - 外部開關 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大(自引導啟動):- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應商設備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063
LT1158CN#PBF 功能描述:IC MOSFET DRVR 1/2BRDG NCH 16DIP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅(qū)動器 - 外部開關 系列:- 標準包裝:95 系列:- 配置:高端和低端,獨立 輸入類型:非反相 延遲時間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大(自引導啟動):600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應商設備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1381 (CN2011-ZH PDF)
LT1158CS 制造商:Linear Technology 功能描述: 制造商:LINEAR_TECH 功能描述:
LT1158CSW 功能描述:IC MOSFET DRVR 1/2BRDG NCH16SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅(qū)動器 - 外部開關 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大(自引導啟動):- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應商設備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063