參數(shù)資料
型號(hào): LT10A05
廠商: LITE-ON ELECTRONICS INC
元件分類(lèi): 參考電壓二極管
英文描述: Quadruple D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SO 0 to 70
中文描述: 10 A, 600 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC, R-6, 2 PIN
文件頁(yè)數(shù): 1/2頁(yè)
文件大小: 32K
代理商: LT10A05
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Ambient.
V
RMS
V
DC
I
(AV)
V
RRM
I
FSM
V
F
I
R
C
J
@T
A
=
50 C
@T
J
=100 C
POWER
SEMICONDUCTOR
LITE
ON
LT10A01 thru LT10A07
PLASTIC SILICON RECTIFIERS
FEATURES
Low cost
Diffused junction
Low forward voltage drop
Low reverse leakage current
High current capability
The plastic material carries UL recognition 94V-0
MECHANICAL DATA
Case : JEDEC R-6 molded plastic
Polarity : Color band denotes cathode
Weight : 0.07 ounces, 2.1 grams
Mounting position : Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
LT10A03
200
140
200
LT10A01
50
35
50
LT10A07
1000
700
1000
LT10A02
100
70
100
LT10A06
800
560
800
LT10A05
600
420
600
LT10A04
400
280
400
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC Method)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward Voltage at 10A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25 C
Typical Junction
Capacitance (Note 1)
10.0
600
1.0
10
100
150
T
J
Operating Temperature Range
-55 to +125
C
T
STG
Storage Temperature Range
-55 to +150
C
Typical Thermal Resistance (Note 2)
R
0JA
10
C/W
pF
uA
V
A
A
V
UNIT
V
V
R-6
A
C
D
A
B
All Dimensions in millimeter
Max.
-
Min.
25.4
8.60
1.20
8.60
R-6
Dim.
A
B
D
C
9.10
1.30
9.10
CHARACTERISTICS
SYMBOL
REVERSE VOLTAGE
FORWARD CURRENT
- 10
Amperes
- 50
to
1000
Volts
REV. 1, 24-May-2000
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