參數(shù)資料
型號(hào): LPC2102FBD48
廠商: NXP Semiconductors N.V.
元件分類(lèi): 數(shù)學(xué)處理器
英文描述: Single-chip 16-bit-32-bit microcontrollers; 8 kB-16 kB-32 kB flash with ISP-IAP, fast ports and 10-bit ADC
封裝: LPC2101FBD48<SOT313-2 (LQFP48)|<<http://www.nxp.com/packages/SOT313-2.html<1<Always Pb-free,;LPC2102FBD48<SOT313-2 (LQFP48)|<<http://www.nxp.com/packages/SOT313-2.html<
文件頁(yè)數(shù): 22/37頁(yè)
文件大小: 192K
代理商: LPC2102FBD48
LPC2101_02_03_4
NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 2 June 2009
22 of 37
NXP Semiconductors
LPC2101/02/03
Single-chip 16-bit/32-bit microcontrollers
7.
Limiting values
[1]
The following applies to the limiting values:
a) This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive
static charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated maximum.
b) Parameters are valid over operating temperature range unless otherwise specified. All voltages are with respect to V
SS
unless
otherwise noted.
[2]
Core and internal rail.
[3]
External rail.
[4]
On ADC related pins.
[5]
Including voltage on outputs in 3-state mode.
[6]
Only valid when the V
DD(3V3)
supply voltage is present.
Not to exceed 4.6 V.
[7]
[8]
Per supply pin.
[9]
The peak current is limited to 25 times the corresponding maximum current.
[10] Per ground pin.
[11] Dependent on package type.
[12] Performed per AEC-Q100-002.
[13] Performed per AEC-Q100-003.
[14] Performed per AEC-Q100-011.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Symbol
Parameter
V
DD(1V8)
supply voltage (1.8 V)
V
DD(3V3)
supply voltage (3.3 V)
V
DDA
analog 3.3 V pad supply voltage
V
i(VBAT)
input voltage on pin VBAT
V
IA
analog input voltage
V
I
input voltage
Limiting values
Conditions
Min
Max
+2.5
+4.6
+4.6
+4.6
+5.1
+6.0
Unit
V
V
V
V
V
V
[2]
0.5
[3]
0.5
0.5
0.5
[4]
0.5
[5][6]
0.5
for the RTC
5 V tolerant I/O
pins
other I/O pins
[5]
0.5
[8]
-
V
DD
+ 0.5
[7]
100
[9]
100
[9]
+150
1.5
V
mA
mA
°
C
W
I
DD
I
SS
T
stg
P
tot(pack)
supply current
ground current
storage temperature
total power dissipation (per package)
[10]
-
[11]
65
based on package
heat transfer, not
device power
consumption
Human Body
Model (HBM)
Machine Model
(MM)
Charged Device
Model (CDM)
-
V
ESD
electrostatic discharge voltage
4000
+4000
V
[12]
200
+200
V
[13]
800
+800
V
[14]
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