參數(shù)資料
型號(hào): LP62S16128-T
廠商: AMIC Technology Corporation
元件分類: SRAM
英文描述: 128K X 16 BIT LOW VOLTAGE CMOS SRAM
中文描述: 128K的× 16位低電壓CMOS的SRAM
文件頁(yè)數(shù): 11/14頁(yè)
文件大小: 160K
代理商: LP62S16128-T
LP62S16128B-I Series
(August, 2001, Version 1.0)
6
AMIC Technology, Inc.
AC Characteristics (TA = -40
°C to +85°C, VCC = 2.7V to 3.6V)
Symbol
Parameter
LP62S16128B-55LLI
LP62S16128B-70LLI
Unit
Min.
Max.
Min.
Max.
Read Cycle
tRC
Read Cycle Time
55
-
70
-
ns
tAA
Address Access Time
-
55
-
70
ns
tACE
Chip Enable Access Time
-
55
-
70
ns
tBE
Byte Enable Access Time
-
55
-
70
ns
tOE
Output Enable to Output Valid
-
25
-
35
ns
tCLZ
Chip Enable to Output in Low Z
10
-
10
-
ns
tBLZ
Byte Enable to Output in Low Z
10
-
10
-
ns
tOLZ
Output Enable to Output in Low Z
5
-
5
-
ns
tCHZ
Chip Disable to Output in High Z
-
20
-
25
ns
tBHZ
Byte Disable to Output in High Z
-
20
-
25
ns
tOHZ
Output Disable to Output in High Z
-
20
-
25
ns
tOH
Output Hold from Address Change
5
-
5
-
ns
Write Cycle
tWC
Write Cycle Time
55
-
70
-
ns
tCW
Chip Enable to End of Write
50
-
60
-
ns
tBW
Byte Enable to End of Write
50
-
60
-
ns
tAS
Address Setup Time
0
-
0
-
ns
tAW
Address Valid to End of Write
50
-
60
-
ns
tWP
Write Pulse Width
40
-
55
-
ns
tWR
Write Recovery Time
0
-
0
-
ns
tWHZ
Write to Output in High Z
-
25
-
25
ns
tDW
Data to Write Time Overlap
25
-
30
-
ns
tDH
Data Hold from Write Time
0
-
0
-
ns
tOW
Output Active from End of Write
5
-
5
-
ns
Note: tBLZ, tOLZ, tCHZ, tBHZ and tOHZ and tWHZ are defined as the time at which the outputs achieve the open circuit condition
and are not referred to output voltage levels.
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