參數(shù)資料
型號(hào)： LP3999
廠商： National Semiconductor Corporation
英文描述： Low Noise 150mA Voltage Regulator for RF/Analog Applications
中文描述： 低噪聲150mA的穩(wěn)壓器的射頻/模擬應(yīng)用
文件頁(yè)數(shù)： 7/15頁(yè)
文件大?。?/td> 350K
代理商： LP3999
Electrical Characteristics
(Continued)
Unless otherwise noted, V
= 1.5, V
= V
+ 1.0V, C
= 1 μF, I
= 1 mA, C
= 1 μF, c
= 0.01 μF. Typical
values and limits appearing in normal type apply for T
J
= 25C. Limits appearing in
boldface
type apply over the full tempera-
ture range for operation, 40 to +125C. (Note 13)
Symbol
Parameter
Conditions
Typical
Limit
Units
Min
Max
DEVICE OUTPUT: 2.5
≤
V
OUT
≤
3.3V
V
OUT
Output Voltage Tolerance
I
OUT
= 1 mA
-2
3
2
3
% of
V
OUT(NOM)
Line Regulation Error
V
IN
= (V
OUT(NOM)
+1.0V) to 6.0V,
I
OUT
= 1 mA
I
OUT
= 1 mA to 150 mA
0.1
0.1
%/V
micro SMD
Load Regulation Error
LLP
Load Regulation Error
Dropout Voltage
0.0004
0.002
%/mA
I
OUT
= 1 mA to 150 mA
0.003
%/mA
I
OUT
= 1 mA
I
OUT
= 150 mA
f = 1 kHz, I
OUT
= 1 mA
f = 10 kHz, I
OUT
= 1 mA
0.4
60
60
50
2
mV
100
PSRR
Power Supply Rejection Ratio
(Note 11)
dB
FULL V
OUT
RANGE
I
LOAD
I
Q
Load Current
Quiescent Current
(Notes 10, 11)
V
EN
= 1.5V, I
OUT
= 0 mA
V
EN
= 1.5V, I
OUT
= 150 mA
V
EN
= 0.4V
0
μA
85
140
0.003
450
150
200
1.5
μA
I
SC
E
N
Short Circuit Current Limit
Output Noise Voltage ((Note 11)) BW = 10 Hz to 100 kHz,
mA
V
IN
= 4.2V, No Load
BW = 10 Hz to 100 kHz,
V
IN
= 4.2V, 1mA Load
Temperature
Hysteresis
10
μVrms
30
T
SHUTDOWN
Thermal Shutdown
160
20
C
ENABLE CONTROL CHARACTERISTICS
I
EN
Maximum Input Current at
V
EN
Input
V
IL
Low Input Threshold
V
IH
High Input Threshold
TIMING CHARACTERISTICS
T
ON
Turn On Time (Note 11)
V
EN
= 0.0V and V
IN
= 6.0V
0.001
μA
0.4
V
V
0.9
To 95% Level (Note 12)
140
μs
Note 3:
Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the device
is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions, see the Electrical
Characteristics tables.
Note 4:
All voltages are with respect to the potential at the GND pin.
Note 5:
For further information on these packages please refer to the following application notes;
AN-1112 Micro SMD Package Wafer Level Chip Scale Package,
AN-1187. Leadless Leadframe Package.
Note 6:
Internal Thermal shutdown circuitry protects the device from permanent damage.
Note 7:
In applications where high power dissipation and/or poor thermal resistance is present, the maximum ambient temperature may have to be derated.
Maximum ambient temperature (T
) is dependant on the maximum operating junction temperature (T
J(max-op)
), the maximum power dissipation (P
D(max)
), and
the junction to ambient thermal resistance in the application (
θ
JA
). This relationship is given by :-
T
A(max)
= T
J(max-op)
(P
D(max)
x
θ
JA
)
Note 8:
Junction to ambient thermal resistance is highly dependant on the application and board layout. In applications where high thermal dissipation is possible,
special care must be paid to thermal issues in the board design.
Note 9:
The human body is 100 pF discharge through 1.5 k
resistor into each pin. The machine model is a 200 pF capacitor discharged directly into each pin.
Note 10:
The device maintains the regulated output voltage without load.
Note 11:
This electrical specification is guaranteed by design.
Note 12:
Time from V
EN
= 0.9V to V
OUT
= 95% (V
OUT(NOM)
)
L
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7
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