參數(shù)資料
型號(hào): LN184
廠商: PANASONIC CORP
元件分類(lèi): 紅外LED
英文描述: GaAlAs Infrared Light Emitting Diode
中文描述: 4.6 mm, 1 ELEMENT, INFRARED LED, 880 nm
文件頁(yè)數(shù): 2/3頁(yè)
文件大小: 171K
代理商: LN184
2
LN184
Infrared Light Emitting Diodes
IF — Ta
120
100
80
60
40
20
Ambient temperature
Ta (C )
Allowable
forward
current
I
F
(mA)
0
20406080
100
0
– 25
IF — VF
160
140
120
100
80
40
20
60
0
Forward voltage
V
F (V)
Ta = 25C
Forward
current
I
F
(mA)
0
0.5
1.0
1.5
2.0
IFP — VFP
1
10 –1
Pulse forward voltage
V
FP (V)
Pulse
forward
current
I
FP
(A)
10 –2
0
tw = 10s
f = 100Hz
Ta = 25C
135
24
P
O — Ta
10
1
Ambient temperature
Ta (C )
IF = 100mA
Relative
radiant
power
P
O
– 40
0
40
80
10 –1
VF — Ta
1.8
1.6
1.4
1.2
0.8
1.0
Ambient temperature
Ta (C )
Forward
voltage
V
F
(V)
– 40
0
40
80
120
P
O — IFP
10 3
10 2
10
1
Pulse forward current
I
FP (A)
Relative
radiant
power
P
O
10
10 –2
10 –1
10 –3
10 –2
10 –1
1
(1) tw = 10s
Duty = 0.1%
(2) tw = 50s
Duty = 50%
(3) DC
Ta = 25C
λ
P — Ta
1000
900
800
700
600
Ambient temperature
Ta (C )
IF = 100mA
Peak
emission
wavelength
λ
P
(nm)
– 40
0
40
80
120
Spectral characteristics
100
80
60
40
20
Wavelength
λ (nm)
Relative
radiant
intensity
(%)
820
860
900
940
980
1020
0
780
IF = 100mA
0
10
20
30
40
50
60
70
80
90
Directivity characteristics
20
90
100
80
70
60
50
40
30
Relative
radiant
intensity
(%)
(1)
(2)
(3)
IF = 100mA
10mA
1mA
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