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參數(shù)資料
| 型號： | LMV324IDR |
| 英文描述： | OP-AMP|QUAD|BICMOS|SOP|14PIN|PLASTIC |
| 中文描述： | 運放|四| BICMOS工藝|?？苵 14PIN |塑料 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 73K |
| 代理商： | LMV324IDR |
LMV321 SINGLE, LMV358 DUAL, LMV324 QUAD
LOW-VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS
SLOS263D
–
AUGUST 1999
–
REVISED APRIL 2002
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
AVAILABLE OPTIONS
TA
PACKAGE
TYPE
PACKAGED DEVICES
SINGLE
LMV321IDCKR
LMV321IDBVR
DUAL
—
—
QUADRUPLE
—
—
5-pin SOT
–
40
°
C to 85
°
C
8-pin SOIC
8-pin TSSOP
8-pin VSSOP
—
—
—
LMV358ID
LMV358IPWR
LMV358IDGKR
—
—
—
14-pin SOIC
14-pin TSSOP
—
—
—
LMV324ID
LMV324IPWR
The D package is available taped and reeled. Add the suffix R to the device type (e.g.,
LMV324DR). The DCK, DBV, DGK, and PW packages are only available left-end taped and
reeled.
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage, V
CC
(see Note 1)
Differential input voltage, V
ID
(see Note 2)
Input voltage, V
I
(either input)
Duration of output short circuit (one amplifier) to ground at (or below) T
A
=
25
°
C,
V
CC
≤
5.5 V (see Note 3)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating virtual junction temperature
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package thermal impedance,
θ
JA
(see Notes 4 and 5): D (8-pin) package
5.5 V
±
5.5 V
0 to 5.5 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Unlimited
150
°
C
97
°
C/W
86
°
C/W
206
°
C/W
252
°
C/W
TBD
°
C/W
149
°
C/W
113
°
C/W
260
°
C
. . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . .
DBV or DCK package
D (14-pin) package
DBV package
DCK package
DGK package
PW (8-pin) package
PW (14-pin) package
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D or PW package
TBD
. . . . . . . . . . . . .
–
65 to 150
°
C
Storage temperature range, T
stg
Stresses beyond those listed under
“
absolute maximum ratings
”
may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under
“
recommended operating conditions
”
is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES:
1. All voltage values (except differential voltages and VCC specified for the measurement of IOS) are with respect to the network GND.
2. Differential voltages are at IN+ with respect to IN
–
.
3. Short circuits from outputs to VCC can cause excessive heating and eventual destruction.
4. Maximum power dissipation is a function of TJ(max),
θ
JA, and TA. The maximum allowable power dissipation at any allowable
ambient temperature is PD = (TJ(max)
–
TA)/
θ
JA. Selecting the maximum of 150
°
C can impact reliability.
5. The package thermal impedance is calculated in accordance with JESD 51-7.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
recommended operating conditions
MIN
MAX
UNIT
VCC
TA
Supply voltage (single-supply operation)
2.7
5.5
V
°
C
Operating free-air temperature
–
40
85
相關PDF資料 |
PDF描述 |
|---|---|
| LMV358IDGKR | OP-AMP|DUAL|BICMOS|TSSOP|8PIN|PLASTIC |
| LMV358IDR | OP-AMP|DUAL|BICMOS|SOP|8PIN|PLASTIC |
| LMV324SID | Operational Amplifier |
| LMV324SIDR | Operational Amplifier |
| LMV324SIPWR | Operational Amplifier |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| LMV324IDRE4 | 功能描述:運算放大器 - 運放 QUAD LV R-R OP AMP RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 轉換速度:0.89 V/us 關閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
| LMV324IDRG4 | 功能描述:運算放大器 - 運放 Quad LowVltg Rail to Rail Output Op Amp RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 轉換速度:0.89 V/us 關閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
| LMV324IDRG4Q1 | 功能描述:運算放大器 - 運放 Quad Lo-Vltg Rail to Rail Output Op Amp RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 轉換速度:0.89 V/us 關閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
| LMV324IDRQ1 | 功能描述:運算放大器 - 運放 Auto Cat Quad LoVltg Rail to Rail Output RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 轉換速度:0.89 V/us 關閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
| LMV324IDT | 功能描述:運算放大器 - 運放 Dual Rail-to-Rail Input and Output RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 轉換速度:0.89 V/us 關閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
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