參數(shù)資料
型號: LM9140
廠商: National Semiconductor Corporation
英文描述: Precision Micropower Shunt Voltage Reference
中文描述: 精密微功耗并聯(lián)電壓參考
文件頁數(shù): 4/12頁
文件大?。?/td> 192K
代理商: LM9140
Electrical Characteristics
(Continued)
Boldface limits apply for T
A
= T
J
= T
MIN
to T
MAX
;
all other limits T
A
= T
J
= 25C
Symbol
Parameter
Conditions
Typical
(Note 4)
Limits
(Note 5)
Units
(Limit)
V
R
Reverse Breakdown Voltage
Long Term Stability
t = 1000 hrs
T = 25C
±
0.1C
I
R
= 100 μA
120
ppm
LM9140BYZ-10.0
Electrical Characteristics
Boldface limits apply for T
A
= T
J
= T
MIN
to T
MAX
;
all other limits T
A
= T
J
= 25C
Symbol
Parameter
Conditions
Typical
(Note 4)
10.00
Limits
(Note 5)
Units
(Limit)
V
mV (max)
mV (max)
μA
μA (max)
μA (max)
ppm/C
ppm/C (max)
ppm/C
mV
mV (max)
mV (max)
mV
mV (max)
mV (max)
(max)
μV
rms
V
R
Reverse Breakdown Voltage
Reverse Breakdown Voltage
Tolerance (Note 6)
Minimum Operating Current
I
R
= 150 μA
I
R
= 100 μA
±
50.0
±
66.3
I
RMIN
75
100
103
V
R
/
T
Average Reverse Breakdown
Voltage Temperature
Coefficient (Note 7)
Reverse Breakdown Voltage
Change with Operating
Current Change
I
R
= 10 mA
I
R
= 1 mA
I
R
= 150 μA
I
RMIN
I
R
1 mA
±
10
±
10
±
10
0.8
±
25
V
R
/
I
R
1.6
3.5
1 mA
I
R
15 mA
8.0
12.0
23.0
Z
R
Reverse Dynamic Impedance
I
R
= 1 mA, f = 120 Hz,
I
AC
= 0.1 I
R
I
R
= 150 μA
10 Hz
f
10 kHz
t = 1000 hrs
T = 25C
±
0.1C
I
R
= 150 μA
0.7
1.7
e
N
Wideband Noise
180
V
R
Reverse Breakdown Voltage
Long Term Stability
120
ppm
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is func-
tional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed speci-
fications apply only for the test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some perfor-
mance characteristics may degrade when the device is not operated under the listed test conditions.
Note 2:
The maximum power dissipation must be derated at elevated temperatures and is dictated by T
(maximum junction temperature),
θ
JA
(junction to am-
bient thermal resistance), and T
(ambient temperature). The maximum allowable power dissipation at any temperature is PD
= (T
Jmax
T
)/
θ
or the number
given in the Absolute Maximum Ratings, whichever is lower. For the LM9140, T
Jmax
= 125C, and the typcial thermal resistance (
θ
JA
), when board mounted, is
170C/W with 0.125" lead length for the TO-92 package.
Note 3:
The human body model is a 100 pF capacitor discharged through a 1.5 k
resistor into each pin. The machine mode is a 200 pF capacitor discharged di-
rectly into each pin.
Note 4:
Typicals are at T
J
= 25C and represent most likely parametric norm.
Note 5:
Limits are 100% production tested at 25C. Limits over temperature are guaranteed through correlation using Statistical Quality Control (SQC) methods. The
limits are used to calculate National’s AOQL.
Note 6:
The boldface (over-temperature) limit for Reverse Breakdown Voltage Tolerance is defined as a room termperature Reverse Breakdown Voltage Tolerance
±
[
V
/
T) (65C) (V
)].
V
/
T is the V
temperature coefficent, 65C is the temperature range from 40C to the reference point of 25C, and V
R
is the reverse
breakdown voltage. The total over-temperature tolerence for the different grades is shown below:
B-grade:
±
0.66% =
±
0.5%
±
25 ppm/C x 65C
Therefore, as an example, the B-grade LM9140-2.5 has an over-temperature Reverse Breakdown Voltage tolerance of
±
2.5V x 0.66% =
±
16.6 mV.
Note 7:
The average temperature coefficient is defined as the maximum deviation of reference voltage at all measured temperatures between the operating T
MAX
and T
MIN
, divided by T
MAX
T
MIN
. The measured temperatures are 55C, 40C, 0C, 25C, 70C, 85C and 125C.
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