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參數(shù)資料
| 型號： | LM5111-2M |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | Dual 5A Compound Gate Driver |
| 中文描述： | 5 A BUF OR INV BASED PRPHL DRVR, PDSO8 |
| 封裝： | MS-012AA, SOIC-8 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 205K |
| 代理商： | LM5111-2M |
LM5111
Dual 5A Compound Gate Driver
General Description
The LM5111 Dual Gate Driver replaces industry standard
gate drivers with improved peak output current and effi-
ciency. Each “compound” output driver stage includes MOS
and bipolar transistors operating in parallel that together sink
more than 5A peak from capacitive loads. Combining the
unique characteristics of MOS and bipolar devices reduces
drive current variation with voltage and temperature. Under-
voltage lockout protection is also provided. The drivers can
be operated in parallel with inputs and outputs connected to
double the drive current capability. This device is available in
the SOIC-8 package.
Features
n
Independently drives two N-Channel MOSFETs
n
Compound CMOS and bipolar outputs reduce output
current variation
n
5A sink/3A source current capability
n
Two channels can be connected in parallel to double the
drive current
n
Independent inputs (TTL compatible)
n
Fast propagation times (25 ns typical)
n
Fast rise and fall times (14 ns/12 ns rise/fall with 2 nF
load)
n
Available in dual non-inverting, dual inverting and
combination configurations
n
Supply rail under-voltage lockout protection
n
Pin compatible with industry standard gate drivers
Typical Applications
n
Synchronous Rectifier Gate Drivers
n
Switch-mode Power Supply Gate Driver
n
Solenoid and Motor Drivers
Package
n
SOIC-8
Pin Configurations
20112301
SOIC-8
July 2004
L
2004 National Semiconductor Corporation
DS201123
www.national.com
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LM5111-2MX | Dual 5A Compound Gate Driver |
| LM5111-3M | Dual 5A Compound Gate Driver |
| LM5111-3MX | Dual 5A Compound Gate Driver |
| LM5112 | Tiny 7A MOSFET Gate Driver |
| LM5112-SD | Tiny 7A MOSFET Gate Driver |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LM5111-2M/NOPB | 功能描述:功率驅(qū)動器IC Dual 5A Compound Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5111-2M/NOPB | 制造商:Texas Instruments 功能描述:MOSFET Driver |
| LM5111-2MX | 功能描述:IC MOSFET DRIVER DUAL 5A 8-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LM5111-2MX/NOPB | 功能描述:功率驅(qū)動器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5111-2MY | 功能描述:功率驅(qū)動器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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