參數(shù)資料
型號(hào): LM5110-3SD
廠商: NATIONAL SEMICONDUCTOR CORP
元件分類: 外設(shè)及接口
英文描述: Dual 5A Compound Gate Driver with Negative Output Voltage Capability
中文描述: 5 A 2 CHANNEL, BUF OR INV BASED PRPHL DRVR, QCC10
封裝: LLP-10
文件頁(yè)數(shù): 5/13頁(yè)
文件大?。?/td> 269K
代理商: LM5110-3SD
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
(Note 1)
V
CC
to V
EE
V
CC
to IN_REF
IN to IN_REF, nSHDN to IN_REF
0.3V to 15V
0.3V to 15V
0.3V to 15V
IN_REF to V
EE
Storage Temperature Range, (T
STG
)
Maximum Junction Temperature,
(T
J
(max))
Operating Junction Temperature
ESD Rating
0.3V to 5V
55C to +150C
+150C
+125C
2kV
Electrical Characteristics
T
= 40C to +125C, V
CC
= 12V, V
EE
= IN_REF = 0V, nSHDN = V
CC
, No Load on OUT_A or OUT_B, unless otherwise
specified.
Symbol
Parameter
Conditions
Min
3.5
Typ
Max
14
Units
V
V
CC
Operating Range
V
CC
Under Voltage Lockout
(rising)
V
CC
Under Voltage Lockout
Hysteresis
V
CC
Supply Current (I
CC
)
V
CC
IN_REF and V
CC
V
EE
V
CC
IN_REF
V
CCR
2.3
2.9
3.5
V
V
CCH
230
mV
I
CC
IN_A = IN_B = 0V (5110-1)
IN_A = IN_B = V
CC
(5110-2)
IN_A = V
CC
, IN_B = 0V
(5110-3)
nSHDN = 0V
1
2
mA
1
2
1
2
I
CCSD
CONTROL INPUTS
V
IH
V
IL
HYS
I
IL
V
CC
Shutdown Current (I
CC
)
18
25
μA
Logic High
Logic Low
Input Hysteresis
Input Current Low
1.75
1.35
400
2.2
V
V
0.8
mV
IN_A=IN_B=V
CC
(5110-1-2-3)
IN_A=IN_B=V
CC
(5110-1)
IN_A=IN_B=V
CC
(5110-2)
IN_A=V
CC
(5110-3)
IN_B=V
CC
(5110-3)
1
0.1
1
μA
I
IH
Input Current High
10
1
-1
10
18
0.1
0.1
18
25
1
1
25
SHUTDOWN INPUT
ISD
VSDR
VSDH
OUTPUT DRIVERS
R
OH
R
OL
I
Source
Pull-up Current
Shutdown Threshold
Shutdown Hysteresis
nSHDN = 0 V
nSHDN rising
18
1.5
165
25
2.2
μA
V
mV
0.8
Output Resistance High
Output Resistance Low
Peak Source Current
I
OUT
= 10 mA
I
OUT
= + 10 mA
OUTA/OUTB = V
CC
/2,
200 ns Pulsed Current
OUTA/OUTB = V
CC
/2,
200 ns Pulsed Current
30
1.4
50
2.5
3
A
I
Sink
Peak Sink Current
5
A
L
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