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參數(shù)資料
| 型號： | LM5109MAX |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 100V / 1A Peak Half Bridge Gate Driver |
| 中文描述： | 1 A HALF BRDG BASED MOSFET DRIVER, PDSO8 |
| 封裝： | MS-012AA, SOIC-8 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 657K |
| 代理商： | LM5109MAX |
Connection Diagrams
Ordering Information
Ordering Number
LM5109MA
LM5109MAX
LM5109SD
LM5109SDX
Package Type
SOIC-8
SOIC-8
LLP-8
LLP-8
NSC Package Drawing
M08A
M08A
SDC08A
SDC08A
Supplied As
Shipped in anti static rails
2500 shipped as Tape & Reel
1000 shipped as Tape & Reel
4500 shipped as Tape & Reel
Pin Description
Pin #
Name
Description
Application Information
SO-8
1
LLP-8
1
V
DD
Positive gate drive supply
Locally decouple to V
SS
using low ESR/ESL capacitor located
as close to IC as possible.
The LM5109 HI input is compatible with TTL input thresholds.
Unused HI input should be tied to ground and not left open
The LM5109 LI input is compatible with TTL input thresholds.
Unused LI input should be tied to ground and not left open.
All signals are referenced to this ground.
Connect to the gate of the low side N-MOS device.
Connect to the negative terminal of the bootstrap capacitor
and to the source of the high side N-MOS device.
Connect to the gate of the low side N-MOS device.
Connect the positive terminal of the bootstrap capacitor to HB
and the negative terminal of the bootstrap capacitor to HS.
The bootstrap capacitor should be placed as close to IC as
possible.
2
2
HI
High side control input
3
3
LI
Low side control input
4
5
6
4
5
6
V
SS
LO
HS
Ground reference
Low side gate driver output
High side source connection
7
8
7
8
HO
HB
High side gate driver output
High side gate driver positive
supply rail
Note: For LLP-8 package it is recommended that the exposed pad on the bottom of the LM5109 be soldered to ground plane on the PCB board and the
ground plane should extend out from underneath the package to improve heat dissipation.
20150502
20150503
FIGURE 2.
L
www.national.com
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LM5109 | 100V / 1A Peak Half Bridge Gate Driver |
| LM5110-2M | Dual 5A Compound Gate Driver with Negative Output Voltage Capability |
| LM5110-2MX | Dual 5A Compound Gate Driver with Negative Output Voltage Capability |
| LM5110-2SD | Dual 5A Compound Gate Driver with Negative Output Voltage Capability |
| LM5110-2SDX | Dual 5A Compound Gate Driver with Negative Output Voltage Capability |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LM5109MAX/J7001236 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Texas Instruments 功能描述: |
| LM5109MAX/NOPB | 功能描述:功率驅(qū)動器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5109SD | 功能描述:IC DVR HALF-BRIDGE 100V 1A 8LLP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LM5109SD/NOPB | 功能描述:功率驅(qū)動器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5109SDX | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:100V / 1A Peak Half Bridge Gate Driver |
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