參數(shù)資料
型號(hào): LM4050CEM3X-4.1
廠商: NATIONAL SEMICONDUCTOR CORP
元件分類: 基準(zhǔn)電壓源/電流源
英文描述: Precision Micropower Shunt Voltage Reference
中文描述: 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 4.096 V, PDSO3
封裝: 3 X 1.30 MM, PLASTIC, TO-236-AB, SOT-23, 3 PIN
文件頁(yè)數(shù): 4/15頁(yè)
文件大小: 277K
代理商: LM4050CEM3X-4.1
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Reverse Current
Forward Current
Power Dissipation (T
A
= 25C) (Note 2)
M3 Package
Storage Temperature
Lead Temperature
M3 Package
Vapor phase (60 seconds)
Infrared (15 seconds)
ESD Susceptibility
Human Body Model (Note 3)
Machine Model (Note 3)
See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering
surface mount devices.
20 mA
10 mA
280 mW
65C to +150C
+215C
+220C
2 kV
200V
Operating Ratings
(Note 2)
Temperature Range
Industrial Temperature
Range
Extended temperature
Range
Reverse Current
LM4050-2.0
LM4050-2.5
LM4050-4.1
LM4050-5.0
LM4050-8.2
LM4050-10.0
(T
min
T
A
T
max
)
40C
T
A
+85C
40C
T
A
+125C
60 μA to 15 mA
60 μA to 15 mA
68 μA to 15 mA
74 μA to 15 mA
91 μA to 15 mA
100 μA to 15 mA
LM4050-2.0
Electrical Characteristics
Boldface limits apply for T
A
= T
J
= T
MIN
to T
MAX
;
all other limits T
= T
= 25C. The grades A, B and C designate initial
Reverse Breakdown Voltage tolerances of
±
0.1%,
±
0.2%, and 0.5% respectively.
Symbol
Parameter
Conditions
Typical
(Note 4)
LM4050AIM3
LM4050AEM3
Limits
(Note 5)
LM4050BIM3
LM4050BEM3
Limits
(Note 5)
LM4050CIM3
LM4050CEM3
Limits
(Note 5)
Units
(Limit)
V
R
Reverse Breakdown Voltage
I
R
= 100 μA
I
R
= 100 μA
Industrial Temp. Range
2.048
V
Reverse Breakdown Voltage
Tolerance (Note 6)
±
2.048
±
9.0112
±
12.288
±
4.096
±
11.4688
±
14.7456
±
10.24
±
14.7456
±
17.2032
mV (max)
mV (max)
Extended Temp. Range
mV (max)
I
RMIN
Minimum Operating Current
41
μA
60
65
60
65
60
65
μA (max)
μA (max)
V
R
/
T
Average Reverse Breakdown
Voltage Temperature
Coefficient (Note 6)
I
R
= 10 mA
I
R
= 1 mA
I
R
= 100 μA
I
RMIN
I
R
1 mA
±
20
±
15
±
15
ppm/C
ppm/C
±
50
±
50
±
50
ppm/C (max)
V
R
/
I
R
Reverse Breakdown Voltage
Change with Operating Current
Change (Note 7)
0.3
mV
0.8
1.2
0.8
1.2
0.8
1.2
mV (max)
mV (max)
1 mA
I
R
15 mA
2.3
mV
6.0
8.0
6.0
8.0
6.0
8.0
mV (max)
mV (max)
Z
R
Reverse Dynamic Impedance
I
= 1 mA, f = 120 Hz, I
AC
= 0.1 I
R
0.3
e
N
Wideband Noise
I
R
= 100 μA
10 Hz
f
10 kHz
t = 1000 hrs
T = 25C
±
0.1C
I
R
= 100 μA
T = 40C to 125C
34
μV
rms
V
R
Reverse Breakdown Voltage
Long Term Stability
120
ppm
V
HYST
Thermal Hysteresis
(Note 8)
0.7
mV
L
www.national.com
4
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PDF描述
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