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參數(shù)資料
| 型號： | LM4050BIM3X-2.0 |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | Precision Micropower Shunt Voltage Reference |
| 中文描述： | 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 2 V, PDSO3 |
| 封裝： | 3 X 1.30 MM, PLASTIC, TO-236-AB, SOT-23, 3 PIN |
| 文件頁數(shù)： | 8/15頁 |
| 文件大?。?/td> | 277K |
| 代理商： | LM4050BIM3X-2.0 |
LM4050-10.0
Electrical Characteristics
Boldface limits apply for T
A
= T
J
= T
MIN
to T
MAX
;
all other limits T
A
= T
J
= 25C. The grades A, B and C designate initial
Reverse Breakdown Voltage tolerances of
±
0.1% and
±
0.2% and 0.5% respectively.
Symbol
Parameter
Conditions
Typical
(Note 4)
LM4050AIM3
LM4050AEM3
Limits
(Note 5)
LM4050BIM3
LM4050BEM3
Limits
(Note 5)
LM4050CIM3
LM4050CEM3
Limits
(Note 5)
Units
(Limit)
V
R
Reverse Breakdown Voltage
I
R
= 150 μA
I
R
= 150 μA
Industrial Temp. Range
10.00
V
Reverse Breakdown Voltage
Tolerance (Note 6)
±
10
±
43
±
60
±
20
±
53
±
70
±
50
±
83
±
100
mV (max)
mV (max)
Extended Temp. Range
mV (max)
I
RMIN
Minimum Operating Current
80
μA
100
103
110
100
103
110
100
103
110
μA (max)
Industrial Temp. Range
μA (max)
Extended Temp. Range
μA (max)
V
R
/
T
Average Reverse Breakdown
Voltage Temperature Coefficient
(Note 6)
I
R
= 10 mA
I
R
= 1 mA
I
R
= 150 μA
I
RMIN
≤
I
R
≤
1 mA
±
40
±
20
±
20
ppm/C
ppm/C
±
50
±
50
±
50
ppm/C (max)
V
R
/
I
R
Reverse Breakdown Voltage
Change with Operating Current
Change (Note 7)
0.8
mV
1.5
3.5
1.5
3.5
1.5
3.5
mV (max)
mV (max)
1 mA
≤
I
R
≤
15 mA
8.0
mV
12.0
23.0
12.0
23.0
12.0
23.0
mV (max)
mV (max)
Z
R
Reverse Dynamic Impedance
I
R
= 1 mA, f = 120 Hz,
I
AC
= 0.1 I
R
I
R
= 150 μA
10 Hz
≤
f
≤
10 kHz
t = 1000 hrs
T = 25C
±
0.1C
0.7
e
N
Wideband Noise
150
μV
rms
V
R
Reverse Breakdown Voltage
Long Term Stability
120
ppm
I
R
= 150 μA
T = 40C to 125C
V
HYST
Thermal Hysteresis
(Note 8)
2.8
mV
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test
conditions.
Note 2:
The maximum power dissipation must be derated at elevated temperatures and is dictated by T
Jmax
(maximum junction temperature),
θ
JA
(junction to
ambient thermal resistance), and T
A
(ambient temperature). The maximum allowable power dissipation at any temperature is PD
max
= (T
Jmax
T
A
)/
θ
JA
or the
number given in theAbsolute Maximum Ratings, whichever is lower. For the LM4050, T
Jmax
= 125C, and the typical thermal resistance (
θ
JA
), when board mounted,
is 326C/W for the SOT-23 package.
Note 3:
The human body model is a 100 pF capacitor discharged through a 1.5 k
resistor into each pin. The machine model is a 200 pF capacitor discharged
directly into each pin.
Note 4:
Typicals are at T
J
= 25C and represent most likely parametric norm.
Note 5:
Limits are 100% production tested at 25C. Limits over temperature are guaranteed through correlation using Statistical Quality Control (SQC) methods.
The limits are used to calculate National’s AOQL.
Note 6:
The boldface (over-temperature) limit for Reverse Breakdown Voltage Tolerance is defined as the room temperature Reverse Breakdown Voltage Tolerance
±
[(
V
R
/
T)(max
T)(V
R
)]. Where,
V
R
/
T is the V
R
temperature coefficient, max
T is the maximum difference in temperature from the reference point of 25C to
T
MIN
or T
MAX
, and V
R
is the reverse breakdown voltage. The total over-temperature tolerance for the different grades in the industrial temperature range where
max
T = 65C is shown below:
A-grade:
±
0.425% =
±
0.1%
±
50 ppm/C x 65C
B-grade:
±
0.525% =
±
0.2%
±
50 ppm/C x 65C
C-grade:
±
0.825% =
±
0.5%
±
50 ppm/C x 65C
Therefore, as an example, the A-grade LM4050-2.5 has an over-temperature Reverse Breakdown Voltage tolerance of
±
2.5V x 0.425% =
±
11 mV.
Note 7:
Load regulation is measured on pulse basis from no load to the specified load current. Output changes due to die temperature change must be taken into
account separately.
Note 8:
Thermal hysteresis is defined as the difference in voltage measured at +25C after cycling to temperature -40C and the 25C measurement after cycling
to temperature +125C.
L
www.national.com
8
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