參數(shù)資料
型號(hào)： LM3207TL/NOPB
廠商： NATIONAL SEMICONDUCTOR CORP
元件分類(lèi)： 穩(wěn)壓器
英文描述： 1.2 A SWITCHING REGULATOR, 2300 kHz SWITCHING FREQ-MAX, PBGA9
封裝： ROHS COMPLIANT, MICRO SMD, 9 PIN
文件頁(yè)數(shù)： 20/24頁(yè)
文件大?。?/td> 1601K
代理商： LM3207TL/NOPB
System Characteristics
The following spec table entries are guaranteed by design providing the component
values in the typical application circuit are used (L = 3.0H, (DCR = 0.12
, FDK MIPW3226D3R0M);
C
IN = 10F, (6.3V, 0805, TDK C2012X5R0J106K); COUT = 4.7F, (6.3V, 0603, TDK C1608X5R0J475M); CLDO = 100nF, (10V,
0402, TDK C1005X5R1A104KT) (or 220nF, (6.3V, 0402, TDK C1005X5R0J224KT))) . These parameters are not guaranteed
by production testing.
Min and Max values are specified over the V
IN range = 2.7V to 5.5V and over the ambient temp range
T
A = 30°C to 85°C unless otherwise specified. Typical values are specified at PVIN = EN = 3.6V and TA = 25°C unless otherwise
specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
LDO
PSRR
Power Supply Rejection
Ratio
Offset Freq = 1Khz, C
out = 100nF,
I
out = 1mA, PVin = Vout(nom) + 0.5V
50
dB
V
LDO(NOISE)
Output Noise Voltage
BW = 10Hz to 100Khz, I
out = 1mA
30
uVrms
t
LDO, ON
Time to reach 90% of
V
LDO(nom) after ENLDO
signal goes high.
C
LDO = 100nF, PWM mode assumed to be
fully functional before EN
LDO goes high.
PV
in = 3V, RLOAD = 562 (Note 12)
3
uS
C
LDO = 220nF, PWM mode assumed to be
fully functional before EN
LDO goes high.
PV
in = 3V, RLOAD = 562 (Note 12)
5
uS
t
LDO, OFF
Time to reach 10% of
V
LDO(nom) after ENLDO
signal goes low.
C
LDO = 100nF, PVin = 3V, Iout = 0mA
(Note 12)
3
uS
C
LDO = 220nF, PVin = 3V, Iout = 0mA
(Note 12)
5
Switcher
T
RESPONSE (Rise
time)
Time for V
OUT to rise from
0.8V to 3.6V
PV
IN = 4.2V, COUT = 4.7uF, L = 3.0uH,
R
LOAD = 5.5
20
30
s
T
RESPONSE (Fall
time)
Time for V
OUT to fall from
3.6V to 0.8V
PV
IN = 4.2V, COUT = 4.7uF, L = 3.0uH,
R
LOAD = 10
20
30
s
C
CON
V
CON input capacitance
V
CON = 1V,
Test frequency = 100 kHz
20
pF
V
CON Linearity
Linearity in control
range 0.32V to 1.44V
PV
IN = 3.9V, Monotonic in nature
-3
+3
%
T
_ON
Turn on time
(time for output to reach
3.6V from Enable low to
high transition)
EN = Low to High, PV
IN = 4.2V,
V
O = 3.6V, COUT = 4.7F,
I
OUT ≤ 1mA
70
100
s
η
Efficiency
(L = 3.0H, DCR
≤
100m
)
PV
IN = 3.6V, VOUT = 0.8V, IOUT = 90mA
81
%
PV
IN = 3.9V, VOUT = 3.4V, IOUT = 400mA
95
%
V
O_ripple
Ripple voltage, PWM
mode
PV
IN = 3V to 4.5V, VOUT = 0.8V,
I
OUT = 10mA to 400mA, (Note 11)
10
mVp-p
Line_tr
Line transient response
PV
IN = 600mV perturbance,
T
RISE = TFALL = 10s, VOUT = 0.8V,
I
OUT = 100mA
50
mV
Load_tr
Load transient response
PV
IN = 3.1/3.6/4.5V, VOUT = 0.8V,
transients up to 100mA,
T
RISE = TFALL = 10s
50
mV
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under which operation
of the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions,
see the Electrical Characteristics tables.
Note 2:
All voltages are with respect to the potential at the GND pins. The LM3207 is designed for mobile phone applications where turn-on after power-up is
controlled by the system controller and where requirements for a small package size overrule increased die size for internal Under Voltage Lock-Out (UVLO)
circuitry. Thus, it should be kept in shutdown by holding the EN pin low until the input voltage exceeds 2.7V.
Note 3:
Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at T
J = 150°C (typ.) and disengages at TJ
= 130°C (typ.).
5
www.national.com
LM3207
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