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參數(shù)資料
| 型號： | LM2722 |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | High Speed Synchronous/Asynchronous MOSFET Driver |
| 中文描述： | 高速同步/異步MOSFET驅(qū)動器 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 162K |
| 代理商： | LM2722 |
Electrical Characteristics
(Continued)
VCC = CBOOT = 5V, SW = GND = 0V, unless otherwise specified. Typicals and limits appearing in plain type apply for T
A
=
T
J
= +25C. Limits appearing in
boldface
type apply over the entire operating temperature range.
Symbol
Parameter
Condition
I
leak_EN
SYNC_EN Pin Leakage
Current
EN = 0V
t
on_min
Minimum Positive Input
Pulse Width
(Note 4)
t
off_min
Minimum Negative Input
Pulse Width
(Note 5)
V
IH_PWM
PWM_IN High Level Input
Voltage
high from 0V
V
IL_PWM
PWM_IN Low Level Input
Voltage
low from 5V
Min
2
2
Typ
Max
2
2
Units
EN = 5V
μA
55
ns
55
When PWM_IN pin goes
2.4
V
When PWM_IN pin goes
0.8
Note 1: Absolute Maximum Ratings
are limits beyond which damage to the device may occur.
Operating ratings
are conditions under which the device operates
correctly. Operating Ratings do not imply guaranteed performance limits.
Note 2:
Maximum allowable power dissipation is a function of the maximum junction temperature, T
, the junction-to-ambient thermal resistance,
θ
, and the
ambient temperature, T
. The maximum allowable power dissipation at any ambient temperature is calculated using: P
= (T
-T
) /
θ
. The junction-to-
ambient thermal resistance,
θ
JA
, for the LM2722, it is 172C/W. For a T
JMAX
of 150C and T
A
of 25C, the maximum allowable power dissipation is 0.7W.
Note 3:
ESD machine model susceptibility is 100V.
Note 4:
If after a rising edge, a falling edge occurs sooner than the specified value, the IC may intermittently fail to turn on the bottom gate when the top gate is
off. As the falling edge occurs sooner and sooner, the driver may start to ignore the pulse and produce no output.
Note 5:
If after a falling edge, a rising edge occurs sooner than the specified value, the IC may intermittently fail to turn on the top gate when the bottom gate is
off. As the rising edge occurs sooner and sooner, the driver may start to ignore the pulse and produce no output.
Timing Diagram
20028903
L
www.national.com
5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LM2722 WAF | 制造商:Texas Instruments 功能描述: |
| LM27222 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:High-Speed 4.5A Synchronous MOSFET Driver |
| LM27222M | 功能描述:功率驅(qū)動器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM27222M/NOPB | 功能描述:功率驅(qū)動器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM27222MX | 功能描述:功率驅(qū)動器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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