參數(shù)資料
型號(hào): LH51BV1000J
廠商: Sharp Corporation
英文描述: CMOS 1M (128K x8) Static Ram(CMOS 1M (128K x8) 靜態(tài)Ram)
中文描述: 100萬(wàn)的CMOS(128K的× 8)靜態(tài)隨機(jī)存儲(chǔ)器(100萬(wàn)的CMOS(128K的× 8)靜態(tài)羊)
文件頁(yè)數(shù): 3/11頁(yè)
文件大?。?/td> 77K
代理商: LH51BV1000J
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNIT
NOTE
Supply voltage
Input voltage
Operating temperature
Storage temperature
V
CC
V
IN
T
OPR
T
STG
–0.5 to +4.6
–0.5 to V
CC
+ 0.3
–25 to +85
–65 to +150
V
V
°
C
°
C
1
1, 2
NOTE:
1.
2.
The maximum applicable voltage on any pin with respect to GND.
Undershoot of –3.0 V is allowed width of pulse below 50 ns.
RECOMMENDED OPERATING CONDITIONS (T
A
= -25
°
C to +85
°
C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
NOTE
Supply voltage
V
CC
V
IH
V
IL
2.7
2.2
–0.3
3.0
3.6
V
V
V
1
Input voltage
V
CC
+ 0.3
0.4
NOTE:
1.
Undershoot of –3.0 V is allowed width of pulse below 50 ns.
DC ELECTRICALCHARACTERISTICS (T
A
= -25
°
C to +85
°
C, V
CC
= 2.7 V to 3.6 V)
PARAMETER
SYMBOL
CONDITIONS
MIN.
TYP.
1
MAX.
UNIT
Input leakage
current
I
LI
V
IN
= 0 V to V
CC
–1.0
1.0
μ
A
Output leakage
current
I
LO
CE
1
= V
IH
or CE
2
= V
IL
or
OE = V
IH
or WE = V
IL
V
I/O
= 0 V to V
CC
CE
1
= V
IL
, V
IN
= V
IL
or V
IH
CE
2
= V
IH
, I
I/O
= 0 mA
CE
1
= V
IL
, V
IN
= V
IL
or V
IH
CE
2
= V
IH
, I
I/O
= 0 mA
CE
1
, CE
2
V
CC
– 0.2 V or CE
2
0.2 V
CE
1
= V
IH
or CE
2
= V
IL
I
OL
= 2.0 mA, V
CC
3 V
I
OL
= –0.1 mA
I
OH
= –2.0 mA, V
CC
3 V
I
OH
= –0.1 mA
–1.0
1.0
μ
A
Operating supply
current
I
CC1
t
CYCLE
=
MIN.
t
CYCLE
=
1.0
μ
s
30
mA
I
CC2
5
Standby current
I
SB
I
SB1
0.6
60
1.0
0.4
0.2
μ
A
mA
Output voltage
V
OL
V
2.4
V
OH
V
CC
– 0.2
NOTE:
1
Typical values at V
CC
= 5.0 V, T
A
= 25°C
AC ELECTRICAL CHARACTERISTICS
AC Test Conditions
PARAMETER
MODE
NOTE
Input pulse level
Input rise and fall time
Input and output timing ref. level
Output load
0.4 V to 2.4 V
5 ns
1.5 V
1 TTL + C
L
(100 pF)
1
NOTE:
1.
Including scope and jig capacitance.
CMOS 1M (128K
×
8) Static RAM
LH51BV1000J
3
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