參數(shù)資料
型號： LH28F640BFHE-PTTL80
英文描述： Flash ROM
中文描述： 閃存ROM
文件頁數(shù)： 38/56頁
文件大?。?/td> 373K
代理商： LH28F640BFHE-PTTL80
LH28F160S5-L/S5H-L
- 38 -
NOTES :
1.
All currents are in RMS unless otherwise noted. Typical
values at nominal V
CC
voltage and T
A
= +25°C. These
currents are valid for all product versions (packages and
speeds).
2.
I
CCWS
and I
CCES
are specified with the device de-
selected. If reading or (multi) word/byte writing in erase
suspend mode, the device’s current draw is the sum of
I
CCWS
or I
CCES
and I
CCR
or I
CCW
, respectively.
3.
Includes STS.
4.
Block erases, full chip erases, (multi) word/byte writes
and block lock-bit configurations are inhibited when V
PP
≤
V
PPLK
, and not guaranteed in the range between
V
PPLK
(max.) and V
PPH1
(min.) and above V
PPH1
(max.).
Automatic Power Saving (APS) reduces typical I
CCR
to
1 mA at 5 V V
CC
in static operation.
CMOS inputs are either V
CC
±0.2 V or GND±0.2 V. TTL
inputs are either V
IL
or V
IH
.
Sampled, not 100% tested.
5.
6.
7.
SYMBOL
PARAMETER
NOTE
V
CC =
5.0±0.5 V
MIN.
–0.5
UNIT
TEST
MAX.
0.8
V
CC
+0.5
CONDITIONS
V
IL
Input Low Voltage
7
V
V
IH
Input High Voltage
7
2.0
V
V
OL
Output Low Voltage
3, 7
0.45
V
V
CC
= V
CC
Min.
I
OL
= 5.8 mA
V
CC
= V
CC
Min.
I
OH
= –2.5 mA
V
CC
= V
CC
Min.
I
OH
= –2.5 mA
V
CC
= V
CC
Min.
I
OH
= –100 μA
V
OH1
Output High Voltage
(TTL)
3, 7
2.4
V
0.85
V
CC
V
CC
–0.4
V
V
OH2
Output High Voltage
(CMOS)
3, 7
V
V
PPLK
V
PP
Lockout Voltage during
Normal Operations
V
PP
Voltage during Write or Erase
Operations
V
CC
Lockout Voltage
4, 7
1.5
V
V
PPH1
4.5
5.5
V
V
LKO
2.0
V
6.2.3 DC CHARACTERISTICS (contd.)
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參數(shù)描述
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LH28F640SPHT-PL12A 功能描述:閃存 64MB X8/X16 3V DUAL SUPPLY RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
LH28F640SPHT-PTL12 功能描述:IC FLASH 64MBIT 120NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR)
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