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參數(shù)資料
| 型號： | LH28F160S5HT-L10 |
| 英文描述： | x8/x16 Flash EEPROM |
| 中文描述： | x8/x16閃存EEPROM |
| 文件頁數(shù)： | 14/56頁 |
| 文件大?。?/td> | 373K |
| 代理商： | LH28F160S5HT-L10 |
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LH28F160S5-L/S5H-L
- 14 -
sequence) may be performed. The status register
may be polled to determine if an error occurs
during the sequence.
To clear the status register, the Clear Status
Register command (50H) is written. It functions
independently of the applied V
PP
voltage. RP#
must be V
IH
. This command is not functional during
block erase, full chip erase, (multi) word/byte write,
block lock-bit configuration, block erase suspend or
(multi) word/byte write suspend modes.
4.5
Query database can be read by writing Query
command (98H). Following the command write,
read cycle from address shown in
Table 6 through
Table 10
retrieve the critical information to write,
erase and otherwise control the flash component.
A
0
of query offset address is ignored when x8
mode (BYTE# = V
IL
).
Query Command
Query data are always presented on the low-byte
data output (DQ
0
-DQ
7
). In x16 mode, high-byte
(DQ
8
-DQ
15
) outputs 00H. The bytes not assigned
to any information or reserved for future use are set
to "0". This command functions independently of
the V
PP
voltage. RP# must be V
IH
.
Table 5 Example of Query Structure Output
4.5.1 BLOCK STATUS REGISTER
This field provides lock configuration and erase
status for the specified block. These informations
are only available when device is ready (SR.7 = 1).
If block erase or full chip erase operation is finished
irregularly, block erase status bit will be set to "1". If
bit 1 is "1", this block is invalid.
MODE
OFFSET ADDRESS
OUTPUT
DQ
15-8
DQ
7-0
A
5
, A
4
, A
3
, A
2
, A
1
, A
0
1, 0, 0, 0, 0, 0 (20H)
1, 0, 0, 0, 0, 1 (21H)
1, 0, 0, 0, 1, 0 (22H)
1, 0, 0, 0, 1, 1 (23H)
A
5
, A
4
, A
3
, A
2
, A
1
1, 0, 0, 0, 0 (10H)
1, 0, 0, 0, 1 (11H)
High Z
High Z
High Z
High Z
"Q"
"Q"
"R"
"R"
x8 mode
x16 mode
00H
00H
"Q"
"R"
Table 6 Query Block Status Register
OFFSET
(Word Address)
(BA+2)H
LENGTH
DESCRIPTION
01H
Block Status Register
bit0
Block Lock Configuration
0 = Block is unlocked
1 = Block is locked
bit1
Block Erase Status
0 = Last erase operation completed successfully
1 = Last erase operation not completed successfully
bit2-7 Reserved for future use
NOTE :
BA = The beginning of a Block Address.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH28F160S5NS-L10 | x8/x16 Flash EEPROM |
| LH28F160S5R-L10 | x8/x16 Flash EEPROM |
| LH28F160S5R-L70 | x8/x16 Flash EEPROM |
| LH28F160S5T-L10 | x8/x16 Flash EEPROM |
| LH28F320BFE-PBTL60 | Flash ROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F160S5HT-L70 | 功能描述:IC FLASH 16MBIT 70NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 |
| LH28F160S5HT-L70T/R | 制造商:Sharp Microelectronics 功能描述:YSM SMART,64K BLOCK, 70NS |
| LH28F160S5HT-TW | 功能描述:IC FLASH 16MBIT 70NS 56TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869 |
| LH28F160S5-L | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:16 M-bit (2 MB x 8/1 MB x 16) Smart 5 Flash Memories (Fast Programming) |
| LH28F160S5-L10 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:16-MBIT(2MBx8/MBx16)Smart 5 Flash MEMORY |
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