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參數(shù)資料
| 型號： | LH28F160S3HNS-L12 |
| 元件分類： | EEPROM |
| 英文描述： | EEPROM |
| 中文描述： | EEPROM的 |
| 文件頁數(shù)： | 35/56頁 |
| 文件大小： | 373K |
| 代理商： | LH28F160S3HNS-L12 |
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LH28F160S5-L/S5H-L
6 ELECTRICAL SPECIFICATIONS
6.1
Operating Temperature
LH28F160S5-L
During Read, Erase, Write and
Block Lock-Bit Configuration
...0 to +70°C
(NOTE 1)
Temperature under Bias.............–10 to +80°C
Absolute Maximum Ratings
LH28F160S5H-L
During Read, Erase, Write and
Block Lock-Bit Configuration
....
–40 to +85°C
(NOTE 2)
Temperature under Bias.............–40 to +85°C
Storage Temperature........................–65 to +125°C
Voltage On Any Pin
(except V
CC
, V
PP
).....
–0.5 V to V
CC
+0.5 V
(NOTE 3)
V
CC
Supply Voltage.................–0.2 to +7.0 V
(NOTE 3)
V
PP
Update Voltage during
Erase, Write and
Block Lock-Bit Configuration
....
–0.2 to +7.0 V
(NOTE 3)
Output Short Circuit Current..............100 mA
(NOTE 4)
WARNING : Stressing the device beyond the
"Absolute
Maximum
permanent damage. These are stress ratings only.
Operation beyond the "Operating Conditions" is not
recommended and extended exposure beyond the
"Operating Conditions" may affect device reliability.
Ratings"
may
cause
NOTES :
1.
Operating temperature is for commercial product defined
by this specification.
2.
Operating temperature is for extended temperature
product defined by this specification.
3.
All specified voltages are with respect to GND. Minimum
DC voltage is –0.5 V on input/output pins and –0.2 V on
V
CC
and V
PP
pins. During transitions, this level may
undershoot to –2.0 V for periods < 20 ns. Maximum DC
voltage on input/output pins and V
CC
is V
CC
+0.5 V
which, during transitions, may overshoot to V
CC
+2.0 V
for periods < 20 ns.
4.
Output shorted for no more than one second. No more
than one output shorted at a time.
NOTICE :
The specifications are subject to
change without notice. Verify with your local
SHARP sales office that you have the latest
datasheet before finalizing a design.
SYMBOL
PARAMETER
NOTE
MIN.
0
–40
4.75
4.50
MAX.
+70
+85
5.25
5.50
UNIT
C
C
V
V
VERSIONS
T
A
Operating Temperature
1
LH28F160S5-L
LH28F160S5H-L
LH28F160S5-L70/S5H-L70
V
CC1
V
CC2
NOTE :
1.
Test condition : Ambient temperature
V
CC
Supply Voltage (5.0±0.25 V)
V
CC
Supply Voltage (5.0±0.5 V)
6.2
Operating Conditions
NOTE :
1.
Sampled, not 100% tested.
SYMBOL
C
IN
C
OUT
PARAMETER
TYP.
7
9
MAX.
10
12
UNIT
pF
pF
CONDITION
Input Capacitance
Output Capacitance
V
IN
= 0.0 V
V
OUT
= 0.0 V
6.2.1 CAPACITANCE
(NOTE 1)
T
A
= +25
C, f = 1 MHz
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH28F160S3HR-L10 | x8/x16 Flash EEPROM |
| LH28F160S3HR-L13 | EEPROM|FLASH|1MX16/2MX8|CMOS|TSSOP|56PIN|PLASTIC |
| LH28F160S3HT-L10 | x8/x16 Flash EEPROM |
| LH28F160S3HT-L13 | EEPROM|FLASH|1MX16/2MX8|CMOS|TSSOP|56PIN|PLASTIC |
| LH28F160S3NS-L13 | EEPROM|FLASH|1MX16/2MX8|CMOS|SOP|56PIN|PLASTIC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F160S3HNS-L13 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:16-MBIT(2MBx8/1MBx16) Smart 3 Flash MEMORY |
| LH28F160S3HNS-TV | 功能描述:IC FLASH 16MBIT 100NS 56SSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869 |
| LH28F160S3HR-L10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| LH28F160S3HR-L13 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|1MX16/2MX8|CMOS|TSSOP|56PIN|PLASTIC |
| LH28F160S3HT-L10 | 制造商:Sharp Microelectronics Corporation 功能描述:NOR Flash Parallel 3V 16Mbit 2M/1M x 8bit/16bit 100ns 56-Pin TSOP |
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