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參數(shù)資料
| 型號(hào)： | LH28F008SAT-120 |
| 英文描述： | x8 Flash EEPROM |
| 中文描述： | x8閃存EEPROM的 |
| 文件頁(yè)數(shù)： | 24/56頁(yè) |
| 文件大小： | 373K |
| 代理商： | LH28F008SAT-120 |
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LH28F160S5-L/S5H-L
- 24 -
Block Erase
Complete
Start
Write 70H
Read
Status Register
0
0
Yes
No
SR.7 =
1
SR.7 =
1
Write 20H,
Block Address
Write D0H,
Block Address
Suspend Block
Erase Loop
Read
Status Register
Full Status
Check if Desired
SR.3 =
FULL STATUS CHECK PROCEDURE
Read Status Register
Data (See Above)
V
PP
Range Error
1
0
SR.1 =
Device Protect Error
1
0
BUS
OPERATION
COMMAND
COMMENTS
Standby
Standby
Check SR.1
1 = Device Protect Detect
WP# = V
IL
, Block Lock-Bit is Set
Only required for systems implement-
ing block lock-bit configuration
Check SR.5
1 = Block Erase Error
SR.5, SR.4, SR.3 and SR.1 are only cleared by the Clear
Status Register command in cases where multiple blocks
are erased before full status is checked.
If error is detected, clear the status register before attempting
retry or other error recovery.
Block Erase
Successful
Repeat for subsequent block erasures.
Full status check can be done after each block erase or after
a sequence of block erasures.
Write FFH after the last block erase operation to place device
in read array mode.
SR.4, 5 =
Command Sequence
Error
1
0
SR.5 =
Block Erase Error
1
0
Standby
Check SR.3
1 = V
PP
Error Detect
Standby
Check SR.4, 5
Both 1 = Command Sequence Error
BUS
OPERATION
Write
Read
Standby
Standby
COMMAND
Read Status
Register
COMMENTS
Data = 70H
Addr = X
Status Register Data
Status Register Data
Check SR.7
1 = WSM Ready
0 = WSM Busy
Check SR.7
1 = WSM Ready
0 = WSM Busy
Erase
Confirm
Erase Setup
Write
Write
Read
Data = D0H
Addr = Within Block to be Erased
Data = 20H
Addr = Within Block to be Erased
Suspend
Block Erase
Fig. 3 Automated Block Erase Flowchart
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH28F008SAT-K12 | x8 Flash EEPROM |
| LH28F008SCB-12 | x8 Flash EEPROM |
| LH28F008SCB-85 | x8 Flash EEPROM |
| LH28F008SCB-L12 | x8 Flash EEPROM |
| LH28F008SCHN-TL15 | x8 Flash EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F008SAT-85 | 功能描述:IC FLASH 8MBIT 85NS 40TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:FLASH 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 |
| LH28F008SAT-K12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| LH28F008SAT-K85 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 MBIT(1 MBIT x 8) FLASH MEMORY |
| LH28F008SAT-ZW | 功能描述:IC FLASH 8MBIT 85NS 40TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869 |
| LH28F008SC | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8M (1M 】 8) Flash Memory |
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